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Shanghai Zengjun Industrial Co., Ltd
TH521 Semiconductor Parameter Analyzer
NegotiableUpdate on 05/25
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Overview
The TH521 semiconductor parameter analyzer is a comprehensive solution for circuit design, which can help power electronic circuit designers choose power devices suitable for their own applications and maximize the value of their power electronic products. It can evaluate all relevant parameters of the device under different operating conditions, including IV parameters (breakdown voltage and on resistance), three terminal FET capacitance, gate charge, and power loss. The TH521 series semiconductor parameter analyzer used for circuit design has complete curve tracking function and other functions.
Product Details
TH521 Semiconductor Parameter AnalyzerIntroduction:
Semiconductor parameter analyzerTH521-35-1800CIt is a comprehensive solution for circuit design, which can help power electronic circuit designers choose power devices suitable for their own applications, enabling their power electronic products to perform well*Great value. It can evaluate all relevant parameters of the device under different operating conditions, includingIVParameters (breakdown voltage and on resistance), three terminalFETCapacitor, gate charge, and power loss. Used for circuit designTH521The series semiconductor parameter analyzer has complete curve tracking function and other functions.
Semiconductor parameter analyzerTH521-35-1800CDetailed Introduction
TH521Introduction to Series Semiconductor Parameter Analyzer:
The TH521 series semiconductor parameter analyzer is a comprehensive solution for circuit design, which can help power electronic circuit designers choose power devices suitable for their own applications and enable their power electronic products to perform well*Great value. It can evaluate all relevant parameters of the device under different operating conditions, includingIVParameters (breakdown voltage and on resistance), three terminalFETCapacitor, gate charge, and power loss. Used for circuit designTH521The series semiconductor parameter analyzer has complete curve tracking function and other functions.
TH521Characteristics of Series Semiconductor Parameter Analyzer:
TH521The conventional characteristics
• Gundam3.5kV/1800AThe broad scope of work
• from -50 °Cto +250 °CFully automatic and rapid thermal testing
• Automatically create technical data for power devices (semiconductors and components)
• The automatic recording function can prevent data loss
• AIAssist in writingpythontest script
TH521 IVPackage Features
• Fully automatic and fast processing of packaging and on-chip devicesIVmeasurement （RonTheBVLeakageVthTheVsatEtc.)
• narrowIVPulse width（*narrow 10 Ms）It can prevent the device from self heating and more accurately test the device's performance International performance
• Oscilloscope view (time domain view) can monitor actual voltage/Current pulse waveform for accurate measurement Accurate measurement
• Configuration can be flexibly expanded and addedCVandQgAdjust the current range from20 Aexpand to200AThe600 Aor1800 A
TH521Complete features of the kit
• IVAll features of the kit
• Measuring packaged devices3.5 kVThe input, output, and reverse transmission capacitance of the transistor
（CissTheCossTheCrssTheCiesTheCoesTheCres）And gate resistance（Rg）
• Measure the gate charge of packaged devices（Qg）Curve
• Calculate power losses (conduction, driving, and switching losses)
TH521Series semiconductor parameter analyzer technical parameters:
MCSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/Measurement accuracy（% + mV + mV） |
*high current |
200mV |
100nV |
±(0.06 + 0.14 + Io x 0.05) |
1A |
2V |
1MV |
±(0.06 + 0.6 + Io x 0.5) |
1A |
20V |
10MV |
±(0.06 + 3 + Io x 5) |
1A |
40V |
40MV |
±(0.06 + 3 + Io x 10) |
1A |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
10MA |
10pA |
±(0.06+ 1E-8 + Vo x 1E-10) |
30V |
100MA |
100pA |
±(0.06 + 2E-8 + Vo x 1E-9) |
30V |
1mA |
1nA |
±(0.06 + 2E-7 + Vo x 1E-8) |
30V |
10mA |
10nA |
±(0.06 + 2E-6 + Vo x 1E-7) |
30V |
100mA |
100nA |
±(0.06 + 2E-5 + Vo x 1E-6) |
30V |
1A |
1uA |
±(0.4 + 2E-4 + Vo x 1E-5) |
30V |
Typical Resolution |
6½bit |
||
*High voltage |
±30V |
||
*low current |
10pA |
||
pulse*Large duty cycle |
5%(Peak value exceeds)100mAtime） |
||
pulse*small width |
10Ms |
||
pulse*large width |
100ms(Peak value exceeds)100mAtime） |
||
direct current*high current |
±100mA |
||
pulse*High peak value |
±1A |
||
pulse*Large base value |
±50mA(Peak value exceeds)100mAtime） |
||
HCSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/Measurement accuracy（% + mV + mV） |
*high current |
200mV |
100nV |
±(0.06 + 0.6 + Io x 0.05) |
20A |
2V |
1MV |
±(0.06 + 0.6 + Io x 0.5) |
20A |
20V |
10MV |
±(0.06 + 3 + Io x 5) |
20A |
40V |
40MV |
±(0.06 + 3 + Io x 10) |
1A |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
10MA |
10pA |
±(0.06+ 1E-8 + Vo x 1E-10) |
40V |
100MA |
100pA |
±(0.06 + 2E-8 + Vo x 1E-9) |
40V |
1mA |
1nA |
±(0.06 + 2E-7 + Vo x 1E-8) |
40V |
10mA |
10nA |
±(0.06 + 2E-6 + Vo x 1E-7) |
40V |
100mA |
100nA |
±(0.06 + 2E-5 + Vo x 1E-6) |
40V |
1A |
1MA |
±(0.4 + 2E-4 + Vo x 1E-5) |
40V |
20A |
20MA |
±(0.4 + 2E-3+Vo x 1E-4) |
20V |
Typical Resolution |
6½bit |
||
*High voltage |
±40V |
||
*low current |
10pA |
||
pulse*Large duty cycle |
1%(Peak value exceeds)1Atime） |
||
pulse*small width |
50Ms |
||
pulse*large width |
1ms(Peak value exceeds)1Atime） |
||
direct current*high current |
±100mA |
||
pulse*High peak value |
±20A |
||
pulse*Large base value |
±100mA(Peak value exceeds)1Atime） |
||
MPSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/Measurement accuracy（% + mV + mV） |
*high current |
100mV |
100nV |
±(0.06 + 0.14 + Io x 0.05) |
100mA |
1V |
1MV |
±(0.06 + 0.6 + Io x 0.5) |
100mA |
10V |
10MV |
±(0.06 + 3 + Io x 5) |
100mA |
100V |
100MV |
±(0.012 + 2.5 + Io x 10) |
20mA(≥40V) 50mA(≤40V) |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
1nA |
1fA |
±(0.1 + 2E-13 + Vo x 1E-15) |
100V |
10nA |
10fA |
±(0.1 + 1E-12 + Vo x 1E-14) |
100V |
100nA |
100fA |
±(0.05 + 2E-11 + Vo x 1E-13) |
100V |
1MA |
1pA |
±(0.05 + 1E-10 + Vo x 1E-12) |
100V |
10MA |
10pA |
±(0.04 + 2E-9 + Vo x 1E-11) |
100V |
100MA |
100pA |
±(0.03 + 3E-9 + Vo x 1E-10) |
100V |
1mA |
1nA |
±(0.03 + 6E-8 + Vo x 1E-9) |
100V |
10mA |
10nA |
±(0.03 + 2E-7 + Vo x 1E-8) |
100V |
100mA |
100nA |
±(0.04 + 6E-6 + Vo x 1E-7) |
20V |
Typical Resolution |
6½bit |
||
*High voltage |
±100V |
||
*low current |
1fA |
||
HVSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/measurement accuracy±(%+mV) |
*high current |
200V |
200uV |
±(0.03+40) |
10mA |
500V |
500uV |
±(0.03+100) |
10mA |
1500V |
1.5mV |
±(0.03+300) |
10mA |
3500V |
3.5mV |
±(0.03+600) |
5mA |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
10nA |
10fA |
±(0.1 + 1E-9 + Vo x 8E-12) |
3500V |
1MA |
1pA |
±(0.05 + 1E-9 + Vo x 8E-12) |
3500V |
100MA |
100pA |
±(0.03 + 3E-9 + Vo x 1E-11) |
3500V |
10mA |
10nA |
±(0.03 + 2E-7+ Vo x 1E-9) |
1750V |
Typical Resolution |
6½bit |
||
*High voltage |
±3500V |
||
*low current |
10fA |
||
UHCU | ||
Voltage range, resolution, and accuracy | ||
Voltage range |
output/Measurement resolution |
output/measurement accuracy±(%+mV) |
60V |
100MV |
±(0.2+10) |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
200A |
200MA |
±(0.6 + 0.3 + 0.01*Vo) |
600A |
500MA |
±(0.6 + 0.3 + 0.01*Vo) |
1800A |
2mA |
±(0.8 + 0.9 + 0.02*Vo) |
pulse*Large duty cycle |
0.4%（600ARange);0.1%（1800Arange） |
|
pulse*small width |
10Ms |
|
pulse*large width |
1ms（600ARange);500Ms（1800Arange） |
|
pulse*High peak value |
200AThe600AThe1800Arange |
|
MFCMU | ||
|
frequency |
frequency range |
1kHz~10MHz |
*Low frequency resolution |
1mHz |
|
Frequency accuracy |
±0.05% |
|
|
AClevel |
Level range |
0~250mV |
resolution |
0.1mVrms |
|
precision |
±(10%*set value+2mV) |
|
|
DCbias |
scope |
0±25V |
resolution |
1mV |
|
accuracy |
1%*set voltage+8mV |
|
Output impedance |
100Ω |
|
Test end configuration |
Four end pairing |
|
Test time |
fast2.5msmedium speed90msslow speed220ms |
|
capacitance |
display range |
0.00001pF~9.99999F |
*High accuracy |
0.05% |
|
TH521Selection Table for Series Semiconductor Parameter Analyzer:
TH521-35-20 |
IV: 3500V/20A |
TH521-35-20C |
IV: 3500V/20A, CV: 10MHz, Qg |
TH521-35-200 |
IV: 3500V/200A |
TH521-35-200C |
IV: 3500V/200A, CV: 10MHz, Qg |
TH521-35-600 |
IV: 3500V/600A |
TH521-35-600C |
IV: 3500V/600A, CV: 10MHz, Qg |
TH521-35-1800 |
IV: 3500V/1800A |
TH521-35-1800C |
IV: 3500V/1800A, CV: 10MHz, Qg |
TH521Application of Series Semiconductor Parameter Analyzer:
• Semiconductor power devices
Diodes, transistorsMOSFETTheIGBTParasitic capacitance testing for thyristors, integrated circuits, optoelectronic chips, etcC-Vfeature analysis
• semiconductor material
Wafer cuttingC-Vfeature analysis
• liquid crystal material
Elastic constant analysis, liquid crystal cutting
• capacitor component
capacitorC-VCharacteristic testing and analysis, capacitive sensor testing and analysis
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