Plasma enhanced atomic layer deposition PEALD

Model: AT650P/850P (plasma enhanced type) AT650T/850T (thermal type)

AT650T/850TCan be upgraded to AT650P/850P at the user's site

Technical Specifications:

·Small desktop plasma type

·The substrate temperature can reach up to 400 ℃

·Having a hollow cathode source

Faster growth rate

Higher electron density

Lower plasma damage

Less oxygen pollution

·Configuring high-frequency RF hollow plasma

·Provide an affordable plasma system at the cost of thermal ALD

·3 types of organic metal sources (can be heated to 185 ℃), 1 constant temperature source (can be upgraded to 185 ℃), and up to 4plantOxidizer/reducing agent source

·High temperature resistant fast pulse ALD valveThe door,Equipped with ultra fast MFC for integrated inert gas blowing - standard

·Up to 6-inch or 8-inch substrates, and customized chucks/bases available

·High coverage can be achieved in static reaction mode

cansupplyselectitem：

·Customized Chuck/Base

·QCM(stoneEnglishcrystalBody Microskyflat)

·Design a aerator for your bottle

·Load lock (or glove box interface)

·Co reactant lines (MFC control) (up to 2 can be added)

·Additional upgrade of precursor heating pipeline to 185 ℃,There are a total of 4 items

Consultation on customizable systems

Customer Case

Global 1Over 00 users, multiple repeat buyers：

Harvard University

University of Helsinki（Professor Mikko Ritala and Matti Putkonen）

pan-Lin Group(LAM) （More than 3 units）

Oxford University（More than 2 units,Prof Sebastian Bonilla）

National Institute of Materials Science（Japan, multiple units)

University of Tokyo（multiple units)

Waseda University（multiple units)

Northwestern University (USA)

Cambridge University (UK)

Rice University

University of British Columbia (Canada)

ENS Paris (France, É cole Normale Sup é rieure)

北京量子研究院

Peking University

University of Bristol (UK)

University of Sheffield, etc

Specific application of repeat purchase customers:

1. Waseda University(Waseda University) (Tokyo, Japan) - Sensors, Surface Modification, Nanoimprint Lithography, Advanced Through Hole Manufacturing (AIST) - Ibaraki Prefecture, Japan

2. Waseda University(Waseda University) (Tokyo, Japan) - System # 2; Similar applications. Yokohama National University, Kanagawa Prefecture, Japan

13. National Institute of Materials Science(NIMS) # 1 (Ibaraki Prefecture, Japan) - Phonons on surfaces and in thin films; Atomic scale low dimensional plasmonics; Spin orbit splitting in nanomaterials

14. National Institute of Materials Science(NIMS) # 2 (Ibaraki Prefecture, Japan) - Spin dependent transport in carbon nanotubes; Nanogap manufacturing and molecular transport; Bandgap engineering in graphene; Organic transistor

21. Private Company (Portland, Oregon, USA)-TEM sample preparation; HfO2, Al2O3, Ta2O5

22. Precision TEM (Santa Clara, California, USA)-TEM sample preparation; HfO2, Al2O3

43. Private Company TK (Miyagi Prefecture, Japan) - TEM Sample Preparation

44. Private Company (Portland, Oregon, USA) - TEM sample preparation; HfO2, Al2O3, Ta2O5

45. The University of Tokyo(University of Tokyo) (Japan) - Excellent ALD process

93. The University of Tokyo(University of Tokyo) - Tokyo, Japan - Dr. Onaya

91. Panlin Group(LAM Research) – Tuvaradin, Oregon, USA(Tualatin)

97. Panlin Group(LAM) System # 2- Tuvaradin, Oregon, USA

98. Pan Forest Group (LAM) System # 3- Tuvaradin, Oregon, USA

99. University of Oxford(University of Oxford) - Oxford, UK - Prof. Sebastian Bonilla

100. Tokushima University (Japan)

101. University of Helsinki(University of Helsinki) (芬兰) Professor Mikko Ritala and Matti Putkonen

102. AMAT - Applied Materials - USA

103. University of Oxford(University of Oxford) (Oxford, UK)