Large scale desktop thermal atomic layer deposition system ALD

Thermal atomic layer deposition technology, with an area of up to37 square centimeters

Large scale desktop thermal atomic layer deposition system

·Aluminum cavity suitable for 37 square centimeter flat panel (second-generation type)

·Suitable for 8 six inch wafers or 4 eight inch wafers with good uniformity (other wafer sizes can be customized)

·4-port heatable front body tubing (customizable)

·Equipped with a built-in high-power coil heater for chamber heating, the maximum temperature can reach 275 ° C

·PLC/human-machine interface system integrating direct control and remote notebook control functions

·Adopting a fast response gas purge flow control device with MFC, the integrated chamber shut-off valve is suitable for high exposure (static) growth mode options

·All hardware and software comply with Semi-S2 and NFPA-79 guidelines

·Compliant with Semi S2 standard

·Additional slow vacuum option

·Optional precursor temperature monitoring with real-time feedback and pulse cycle control functions

·Optional combustible gas tank with LCD display for weight tracking and traceability

Working principle of ALD equipment

The atomic layer deposition (ALD) system consists of several core components: precursor source and its reactant valves, reaction chamber with temperature control platform (or fixture), inert gas, and vacuum system (or purge system). This process will alternate the introduction of precursors and reactants, with only one introduced at a time, and there will be a purging step in between. This can prevent the precursor from reacting in the gas phase, ensuring that only surface specific reactions occur. The result is the formation of a layer of single-molecule deposition in each cycle, thereby achieving control over thin film growth at the atomic scale. This reaction is self limiting, which means that once the precursor reacts with the surface and fills the available active sites (for oxides, hydroxyl groups, etc.), the reaction cannot continue.

Anruike Technology CompanyThe developed desktop atomic layer deposition system is easy to operate and maintain, with excellent heat dissipation management functions, customizable plasma sources, and software driven automation functions. It can support thermal enhanced and plasma enhanced atomic layer deposition processes. These tools are scalable - from glove box compatible lab bench equipment to complete 12 inch wafer systems - and carefully designed to achieve the highest process stability, ease of use, and integration into various laboratory environments.

Application field

Anruike Technology CompanyALD technology is an important foundation for the development of next-generation semiconductors, energy storage devices, optoelectronic devices, and biocompatible materials. Its ability to uniformly cover nanostructures makes it crucial in the following fields:

·Microelectronics and Micro Electro Mechanical Systems Technology for Gate Dielectric and Barrier Layers

·Solid state batteries and supercapacitors for electrode and electrolyte coatings

·Optical coatings on gratings, lenses, and photonic structures

·Catalytic effect and development of fuel cells, in which atomic layer deposition technology can achieve controllable surface modification

·Biomedical devices requiring thin films with corrosion resistance and biological inertness

·Surface passivation and encapsulation treatment of easily degradable materials

As the industry develops towards smaller, faster, and more efficient equipment, the importance of atomic layer deposition technology is also increasing day by day.

Customer Case

*More than 100 users, multiple repeat buyers:

♢ Harvard University

♢ University of Helsinki (Professors Mikko Ritala and Matti Putkonen)

♢ Pan Forest Group (LAM) (6 or more units)

♢ Oxford University (2 or more, Prof. Sebastian Bonilla)

♢ National Institute of Materials Science (Japan, multiple stations)

♢ University of Tokyo (multiple stations)

Waseda University (Multiple Stations)

Northwestern University (USA)

♢ Cambridge University (UK)

♢ Rice University

♢ University of British Columbia (Canada)

ENS Paris (France, É cole Normale Sup é rieure)

♢ 北京量子研究院

♢ Peking University

♢ University of Bristol (UK)

♢ University of Sheffield, etc

Specific applications of repeat purchases from customers

Waseda University (Tokyo, Japan) - Sensors, Surface Modification, Nanoimprint Lithography, Through Hole Manufacturing (AIST) - Ibaraki Prefecture, Japan

Waseda University (Tokyo, Japan) - System # 2; Similar applications. Yokohama National University, Kanagawa Prefecture, Japan

3. National Institute of Materials Science (NIMS) # 1 (Ibaraki Prefecture, Japan) - Phonons in Surface and Thin Films; Atomic scale low dimensional plasmonics; Spin orbit splitting in nanomaterials

4. National Institute of Materials Science (NIMS) # 2 (Ibaraki Prefecture, Japan) - Spin dependent transport in carbon nanotubes; Nanogap manufacturing and molecular transport; Bandgap engineering in graphene; Organic transistor

5. Private Company (Portland, Oregon, USA) - TEM sample preparation; HfO2, Al2O3, Ta2O5

6. Precision TEM (Santa Clara, California, USA) - TEM sample preparation; HfO2, Al2O3

7. Private Company TK (Miyagi Prefecture, Japan) - TEM Sample Preparation

8. Private Company (Portland, Oregon, USA) - TEM sample preparation; HfO2, Al2O3, Ta2O5

9. University of Tokyo (Japan) - ALD process

10. University of Tokyo - Tokyo, Japan - Dr. Onaya

11. LAM Research - Tualatin, Oregon, USA

12. Pan Forest Group (LAM) System # 2- Tuvaradin, Oregon, USA

13. Pan Forest Group (LAM) System # 3- Tuvaradin, Oregon, USA

14. University of Oxford - Oxford, UK - Prof. Sebastian Bonilla

15. Tokushima University (Japan)

16. Professors Mikko Ritala and Matti Putkonen from the University of Helsinki (Finland)

17. AMAT - Applied Materials - USA

18. University of Oxford (Oxford, UK)