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E-mail
2577895416@qq.com
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Phone
19867723812
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Address
3rd Floor, Building C, Yisai Technology Park, No. 365 Baotian 1st Road, Bao'an District, Shenzhen
Shenzhen Huapu General Technology Co., Ltd
2577895416@qq.com
19867723812
3rd Floor, Building C, Yisai Technology Park, No. 365 Baotian 1st Road, Bao'an District, Shenzhen
Japanese Institute of Technology Continuous Wavelength Dispersive X-ray Fluorescence SpectrometerZSX Primus 400Product Description: How to Translate
The Rigaku ZSX Primus 400 Continuous Wavelength Dispersive X-ray Fluorescence (WDXRF) spectrometer is designed specifically for processing very large or heavy samples. This system can accept samples with a maximum diameter of 400 millimeters, a thickness of 50 millimeters, and a mass of 30 kilograms, making it ideal for analyzing sputtering targets, disks, or for multi-layer thin film metrology or elemental analysis of large samples.

Advantages:
XRF with customized sample adapter system, versatile to meet specific sample analysis needs, can use optional adapter plugins to adapt to various sample sizes and shapes. With variable measurement points (diameter ranging from 30mm to 0.5mm, with 5-step automatic selection) and mapping function with multi-point measurement to check sample uniformity.
XRF with available cameras and special lighting, optional real-time camera allows viewing of the analysis area in the software.
Still retains all the analytical capabilities of traditional instruments.
Security:
Adopting an upward irradiation design, the sample chamber can be easily removed without worrying about contaminating the light path, cleaning difficulties, and increasing cleaning time.
Application fields:
Elemental analysis of solids, liquids, powders, alloys, and films.
Composition of sputtering target material.
Isolation film: SiO2, BPSG, PSG, AsSG, Si ∝ N ₄, SiOF, SiON, etc.
High k and ferroelectric dielectric thin films: PZT, BST, SBT, Ta2O5, HfSiOx.
金属薄膜: Al-Cu-Si、W、TiW、Co、TiN、TaN、Ta-Al、Ir、Pt、Ru、Au、Ni 等。
Electrode film: doped polycrystalline silicon (dopants: B, N, O, P, As), amorphous silicon, WSix, Pt, etc.
Other doped thin films (As, P), trapped inert gases (Ne, Ar, Kr, etc.) C(DLC)。
Ferroelectric thin film FRAM、MRAM、GMR、TMR; PCM、GST、GeTe。
Solder bump composition: SnAg, SnAgCuNi.
MEMS: Thickness and composition of ZnO, AlN, PZT.
SAW device process: thickness and composition of AlN, ZnO, ZnS, SiO2 (piezoelectric thin film); Al, AlCu, AlSc, AlTi (electrode film).
Japanese Institute of Technology Continuous Wavelength Dispersive X-ray Fluorescence SpectrometerZSX Primus 400Technical Specifications:
Large sample analysis: up to 400 millimeters (diameter), up to 50 millimeters (thickness), up to 30 kilograms (mass)
Sample adapter system, suitable for various sample sizes
Measurement point: 30mm to 0.5mm diameter, 5-step automatic selection
Mapping capability, allowing for multi-point measurement
Sample view camera (optional)
Analysis scope: Be - U
Element range: ppm to%
Thickness range: sub Å to mm
Diffraction interference suppression (optional): Accurate results for single crystal substrates
Compliant with industry standards: SEMI, CE markings
Small footprint, 50% of the previous model's footprint