CCP plasma etching machine

NegotiableUpdate on 01/14

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

Online Consult

Overview

CCP Plasma Etcher is a commonly used equipment in the field of micro nano processing, used for fine processing and pattern definition of materials such as semiconductor devices, optical components, and biochips. The principle is based on plasma technology, which generates plasma by discharging gas, and uses ions and free radicals in the plasma to chemically react and physically etch the material surface.

Product Details

1. Introduce gas (such as fluorinated gas) into the reaction chamber and discharge the gas through radio frequency (RF) power source or microwave source. The electric field and energy generated during the discharge process excite gas molecules, forming plasma.

2. Gas molecules are excited into active species such as ions, electrons, and free radicals. These active species undergo chemical reactions on the surface of materials, such as fluorination, oxidation, silicification, etc., thereby changing the surface chemical properties.

3. Ions and free radicals apply energy to the surface of materials, resulting in the removal of atoms or molecules from the material surface. This physical etching process gradually peels off the surface of the material, achieving fine processing and pattern definition of the material.

By controlling parameters such as gas type, discharge power, and reaction chamber pressure, selective etching of different materials can be achieved. For example, selective etching of materials such as silicon, silicon nitride, and silicon oxide can be achieved.

5. It is usually equipped with auxiliary functions such as vacuum system, temperature control system, gas flow control system, etc. to ensure the stability and controllability of the etching process.

The CCP plasma etching machine WINETCH is a cost-effective CCP plasma system designed for the needs of scientific research and enterprise R&D customers. As a multifunctional system, it achieves high-performance CCP etching process through optimized system design and flexible configuration scheme. The device has a compact structure and a small footprint. Its mechanical design and optimized automation software make it easy and safe to operate, and the process is stable and has good repeatability.

CCP etching is a commonly used micro nano processing technique, widely used in semiconductor device manufacturing, optical device manufacturing, microchip manufacturing, and other fields. The principle is to use a high-frequency alternating electric field to generate plasma, and under the action of the plasma, the material surface undergoes chemical reactions and physical collisions, thereby achieving etching of the material.

The WINETCH etching system of the CCP plasma etching machine generates high-density plasma through capacitive coupling (CCP), and selectively etches dielectric materials (such as silicon oxide SiO2, silicon nitride SiNx, etc.) according to the mask pattern (such as photoresist mask).

The CCP system mainly consists of the following parts: reaction chamber, power down, spray head (power on), RF power supply, vacuum system, pre vacuum chamber, gas path system, control system and software, supporting accessories, etc.

WINETCH plasma etching machine product features:

-Good etching morphology and process performance*

-High selectivity and high etching rate

-Low cost of ownership and consumption

WINETCH plasma etching machine technical parameters:

Wafer size: 6/8 inches compatible

Applicable process: plasma etching

Applicable materials: SiO2, Si3N4, etc. Applicable fields: compound semiconductors MEMS、 Power devices, scientific research, and other fields