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Address
Room 2802, Building T4, Yinxuan Center Building, Bao'an District, Shenzhen
Wechsler Nanosystems GmbH, Germany
Room 2802, Building T4, Yinxuan Center Building, Bao'an District, Shenzhen

When developing and using MOSFETs, IGBTs, diodes, and other high-power devices, comprehensive device level characterization is required, including measurement of parameters such as breakdown voltage, on state current, and capacitance. Keithley's high-power parameter curve tracking configuration series can support the characterization requirements of all types of devices and various testing parameters.
Jishili's parameter curve tracking configuration includes all necessary hardware for characterization engineers to quickly build a complete testing system. The ACS basic version software that needs to be ordered separately can achieve comprehensive device characterization functions, including real-time tracking mode for quickly detecting basic device parameters such as breakdown voltage, as well as full parameter mode for extracting accurate device parameters.
The ACS basic version software surpasses the interface limitations of traditional curve trackers and provides a rich library of examples. More importantly, users have control over all testing resources, enabling them to create more advanced tests than traditional curve trackers can achieve.

Core Features
The complete solution is professionally designed to achieve cost-effectiveness
Supports on-site upgrades and reconfigurations to convert parameter curve trackers (PCTs) into reliability testing equipment or wafer sorting testers
Configurable power range:
- Voltage: 200V to 3kV
- Current: 1A to 100A
Wide dynamic range:
- Voltage: from microvolts (µ V) to kilovolts (kV)
- Current: from fA to 100A
Comprehensive capacitance voltage (C-V) testing capability:
- Capacitor: From Faradaic (fF) to Microfarad (µ F)
- Supports 2-terminal, 3-terminal, and 4-terminal devices
- DC bias up to 3kV
High performance testing fixtures that support multiple packaging types
The probe station interface is compatible with most probe types, including high-voltage triax, ultra-high voltage coaxial, standard triax, and other types
Jishili's parameter curve tracking configuration is a complete characterization tool that includes key elements required for power device characterization. Measurement channel by Jishili SourceMeter ® It consists of a source measurement unit (SMU) instrument and an optional multi frequency capacitance voltage (C-V) instrument. The dynamic range and accuracy of these instruments far exceed traditional curve trackers.
Complete system accessories
High voltage capacitor - voltage (C-V)
The capacitance of testing devices is becoming increasingly important in response to changes in DC voltage. Jishili provides PCT-CVU multi frequency capacitor voltage meter. When used in conjunction with optional 200V or 3kV bias T-joints, capacitance voltage measurements can be performed on two terminal, three terminal, or four terminal devices. The measurable capacitance range is from Faraf (fF) to 100 nanofarads (nF), with a testing frequency of 10kHz to 2MHz. The ACS Basic Edition software provides over 60 preset capacitance voltage tests, including MOSFET input capacitance (Ciss), output capacitance (Coss), reverse transfer capacitance (Crss), gate drain capacitance (Cgd), gate source capacitance (Cgs), drain source capacitance (Cds), as well as a complete set of tests for bipolar junction transistors (BJTs), diodes, and other devices. As always, users can independently develop exclusive testing algorithms in ACS Basic Edition.
