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Shanghai Nateng Instrument Co., Ltd

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Wafer warpage stress measuring instrument

NegotiableUpdate on 05/06
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Overview

The wafer warpage stress measuring instrument has the function of detecting three-dimensional warpage (flatness) and thin film stress, and is suitable for semiconductor wafer production, semiconductor process development, glass and ceramic wafer production

Product Details

Wafer warpage stress measuring instrument

advantage

√ Uniform sampling measurement with a minimum sampling interval of up to0.1mm

√ Simultaneously equipped with warping measurement and stress measurement functions

√ Intuitively display the crystal circular deformation caused by the thin film, and calculate the curvature and stress at any angle

Additional module for √ *: Thin film stress temperature measurement module(From room temperature to)500℃)

√ Rich software analysis functions, including: 3D warpage map, wafer warpage parameter statistics(BOWWARPEtc.)ROIpart Various post-processing algorithms such as analysis, thin film stress and distribution, stress variation over time, thin film stress temperature measurement, curvature calculation, polynomial fitting, spatial filtering, etc.

Applicable subjects

2-8 inch/12 Inch polished wafers (silicon, gallium arsenide, silicon carbide, etc.), patterned wafers, bonding wafers, packaging wafers, etc;LCD substrate glass; Surface treated by various thin film processes

Applicable fields

Production and quality inspection of semiconductor and glass wafers

Research and development of semiconductor thin film technology

Process control and fault analysis of semiconductor manufacturing and packaging thinning processes

Detection Principle

During the wafer manufacturing process, thin films are repeatedly deposited on the wafer surface, and the differences in material properties between the substrate and the thin film lead to wafer warping, warping, and thinningMembrane stress has a significant impact on process yield

√ Use structured light reflection imaging method to measure the three-dimensional warpage distribution of wafers, and calculate the stress distribution of thin films by measuring the curvature radius of warpageCloth has the characteristics of non-contact, no mechanical scanning, and high sampling rate. The full aperture measurement time of the wafer is less than30s

√ ThroughStoneyFormulas and related models for calculating the stress distribution of wafer thin films



Wafer warpage stress measuring instrument

晶圆翘曲应力测量仪

晶圆翘曲应力测量仪晶圆翘曲应力测量仪晶圆翘曲应力测量仪

晶圆翘曲应力测量仪