Wafer bonding machine

EVG 810 LT LowTemp™ Plasma Activation System

EVG 810LT LowTemp™Plasma activation system

Applicable toSOI，MEMSLow temperature plasma activation system for compound semiconductor and advanced substrate bonding

Technical data

EVG810 LT LowTemp™ The plasma activation system is a single chamber independent unit with manual operation. The processing chamber allows for ex situ processing (wafers are activated one by one and bonded outside the plasma activation chamber).

feature

Surface plasma activation for low-temperature bonding (melting)/Molecular and intermediate layer bonding

Wafer bonding machinein mourningzuiFast dynamics

No wet process required

Low temperature annealing（zuitall400°C）BelowzuiHigh bonding strength

Applicable toSOI，MEMSCompound semiconductor and advanced substrate bonding

High material compatibility (includingCMOS）

EVG810 LTTechnical data

Wafer diameter (substrate size):50-200、100-300millimeter

LowTemp™ Plasma activation chamber

Process gas:2Standard process gas（N2andO2）

Universal Quality Flow Controller: Self Calibration (up to)20.000 sccm）

Vacuum system:9x10-2 mbar

Opening of the chamber/Close: Automation

Loading of the chamber/Unloading: Manual (wafer removal)/The substrate is placed on the loading pin

Optional features

Chuck is suitable for different wafer sizes

Activation without metal ions

Other process gases of mixed gases

High vacuum system with turbo pump:9x10-3 mbarBasic pressure

conform toLowTemp™ Material system for plasma activated bonding

Si：Si / Si，Si / Si(Thermal oxidation,Si(Thermal oxidation)/ Si(Thermal oxidation)

TEOS / TEOS(Thermal oxidation)

Germanium insulator（GeOIofSi / Ge