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Room 616, 6th Floor, Zhaowei Building, No. 14 Jiuxianqiao Road, Chaoyang District, Beijing
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Beijing Yakechenxu Technology Co., Ltd
Thin film deposition CVD
NegotiableUpdate on 05/08
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Overview
The SI 500D plasma deposition system is an ICP-PECVD equipment that uses an ICP high-density plasma source to deposit dielectric thin films. High quality SiO2, Si3N4, and SiOxNy thin films can be deposited at extremely low temperatures ( lt; 100 # 186; C). Continuous adjustment of deposited film thickness, refractive index, and stress can be achieved.
Product Details
SENTECH ICPPlasma deposition system - SI 500D
We are a mainstream semiconductor equipment manufacturer, specializing in the research, development, manufacturing, and sales of excellent thin film measuring instruments (reflectometers, ellipsometers, spectroscopic ellipsometers) and plasma process equipment (plasma etching machines, plasma deposition systems, customized systems).
SI 500DThe plasma deposition system is an ICP-PECVD equipment that uses an ICP high-density plasma source to deposit dielectric thin films. High quality SiO2, Si3N4, and SiOxNy thin films can be deposited at extremely low temperatures (<100 º C). Continuous adjustment of deposited film thickness, refractive index, and stress can be achieved.
SI 500 DKey Features:
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Suitable for chips of 8 inches and below
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Low temperature deposition of high-quality dielectric film: 80 ° C~350 ° C
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High-speed sedimentation
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Low damage
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Thin film properties (thickness, refractive index, stress) are continuously adjustable
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Flat triple helix antenna PTSA plasma source（PlanarTripleSpiralAnot)
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SENTECHAdvanced plasma equipment operation software
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Wall through installation method
System configuration:
