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Beijing Yakechenxu Technology Co., Ltd
Wafer bonding machine
NegotiableUpdate on 05/08
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Overview
The wafer bonding machine is suitable for low-temperature plasma activation systems for SOI, MEMS, compound semiconductors, and advanced substrate bonding; Technical data: EVG810 LT LowTemp amp; amp; trade; The plasma activation system is a single chamber independent unit with manual operation. The processing chamber allows for ex situ processing (wafers are activated one by one and bonded outside the plasma activation chamber).
Product Details
EVG 850 LT
Automated Production Bonding System for SOI and Direct Wafer Bonding
Automated production bonding system for EVG 850LT SOI and direct wafer bonding
Automated production bonding system, suitable for various fusion/molecular wafer bonding applications
Wafer bonding is a key technology in SOI wafer manufacturing process and wafer level 3D integration. Utilizing the EVG850 LT automated production bonding system for mechanical alignment of SOI and featuring LowTemp ™ Plasma activated direct wafer bonding integrates all the basic steps of fusion - from cleaning, plasma activation and alignment to pre bonding and IR inspection. Therefore, the industry standard EVG850 LT, which has been tested in practice, ensures high-throughput and high-yield production processes for gap free SOI chips up to 300 mm in size.
feature
Utilizing EVG's LowTemp ™ Plasma activation technology for SOI and direct wafer bonding
Suitable for various fusion/molecular wafer bonding applications; The production system can operate in high-throughput, high-yield environments
Automatic box to box operation (incorrect loading, SMIF or FOUP); Non polluting backside treatment
Supersonic and/or brush cleaning; Pre bonding for mechanical leveling or gap alignment
Advanced remote diagnostic technology data
Wafer diameter (substrate size) 100-200, 150-300 millimeters
Fully automatic cartridge to cartridge operation
Pre bonding room
Alignment type: flat to flat or notch to notch
Alignment accuracy: X and Y: ± 50 µ m, θ: ± 0.1 °
Combining force: maximum 5 N
Starting position of bonding wave: flexible from the edge to the center of the wafer
Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (turbo pump option)
LowTemp ™ Plasma activation module
2 standard process gases: N2 and O2, and 2 other process gases: high-purity gas (99.999%), rare gases (Ar, He, Ne, etc.), and synthesis gas (N2, Ar, and H4 with the highest content)
Universal mass flow controller: capable of self calibration for up to 4 process gases, programmable formula, and maximum flow rate of up to 20.000 sccm
