Welcome Customer !

Membership

Help

Xiamen Chaoxinxin Technology Co., Ltd
Custom manufacturer

Main Products:

instrumentb2b>Products

Xiamen Chaoxinxin Technology Co., Ltd

  • E-mail

    info@chip-nova.com

  • Phone

    15860798525

  • Address

    Room 206, North Building, Weiye Building, Innovation and Entrepreneurship Park, No.11 Huoju East Road, Huli District, Xiamen City, Fujian Province

Contact Now

Transmission electron microscopy high-temperature electromechanical in-situ system

NegotiableUpdate on 12/14
Model
Nature of the Manufacturer
Producers
Product Category
Place of Origin
Overview
The transmission electron microscope high-temperature force electric in-situ system applies mechanical, electric, and thermal field control to the sample through MEMS chips. A multi field automatic control and feedback measurement system for force, electric, and thermal composite is constructed in the in-situ sample stage. Combined with various modes such as EDS, EELS, SAED, HRTEM, STEM, etc., real-time and dynamic monitoring of key information such as microstructure, phase transition, elemental valence state, micro stress, and structural and compositional evolution at the surface/interface of the sample under vacuum environment with temperature, electric field, and applied force changes is achieved at the nanoscale.
Product Details

638266707032275283315.png


Our Advantages

mechanical properties

1. High precision piezoelectric ceramic drive, nanometer level precision digital precise positioning.

2. Implementation1000℃Testing of micro mechanical properties such as compression, tension, and bending under heating conditions.

3.NN level mechanical measurement noise.

4. It has the function of real-time automatic collection of continuous load displacement time data.

5. Equipped with constant load, constant displacement, and cyclic loading control functions, suitable for studying the creep characteristics, stress relaxation, and fatigue performance of materials.


Excellent thermal performance

1. High precision infrared temperature measurement and calibration, micrometer level high-resolution thermal field measurement and calibration to ensure temperature accuracy.

2. Ultra high frequency temperature control method eliminates the influence of wires and contact resistance, and measures temperature and electrical parameters more accurately.

3. High stability precious metal heating wire (non ceramic material) is used, which is both a thermal conductive material and a thermal sensitive material. Its resistance has a good linear relationship with temperature. The heating zone covers the entire observation area, and the heating and cooling rates are fast. The thermal field is stable and uniform, and the temperature fluctuation in a stable state is ≤± 0.1 ℃.

4. Adopting a closed-loop high-frequency dynamic control and feedback environmental temperature control method, high-frequency feedback control eliminates errors, and the temperature control accuracy is ± 0.01 ℃.

5. Multi level composite heating MEMS chip design, controlling thermal diffusion during heating process, greatly suppressing thermal drift during heating process, ensuring efficient observation of experiments.


Excellent electrical performance

1. The protective coating on the surface of the chip ensures low noise and accuracy in electrical measurements, and the current measurement accuracy can reachPian level.

2. Special design for MEMS microfabrication, simultaneously loading electric field, thermal field, and mechanics for independent control.


Intelligent software

1. Human machine separation, software remote control of nanoprobes movement, automatic measurement of load displacement data.

2. Customize the program's heating curve. It is possible to define a heating program with more than 10 steps and a constant temperature time. At the same time, the target temperature and time can be manually controlled. If temperature and constant temperature are required during the heating process, the experimental plan can be adjusted immediately to improve experimental efficiency.

3. Built in absolute temperature calibration program, each chip can re fit and calibrate the curve according to the change in resistance value during temperature control, ensuring the accuracy of temperature measurement and the reproducibility and reliability of high-temperature experiments.



Technical Specifications

category project parameter
Basic Parameters Rod material High strength titanium alloy
Control method High precision piezoelectric ceramics
Tilt angle α ≥ ± 20 °, tilt resolution<0.1 ° (actual range depends on transmission electron microscope and pole shoe model)
Applicable electron microscope Thermo Fisher/FEI, JEOL, Hitachi
Suitable for extreme boots ST, XT, T, BioT, HRP, HTP, CRP
(HR)TEM/STEM support
(HR)EDS/EELS/SAED support











Application Cases




Mechanical Compression Experiment of Copper Nanocolumns at High Temperature of 600 ° C

Micro electromechanical systems (MEMS) characterized by small shapes and sizes or extremely small operational scales are receiving increasing attention from people. For samples with scales below 100 μ m, it will bring a series of difficulties to conventional tensile and compressive tests. Nano compression experiments are gradually becoming the main method for measuring micro/nano scale mechanical properties due to the small pressure generated within the local volume of the material surface. Therefore, it is necessary to conduct experimental research on the deformation behavior of materials at the micro nano scale. In order to study the deformation behavior of single crystal face centered cubic materials at the micro nano scale, nano compression experiments were used as the main method to analyze the initial plastic deformation behavior of copper nanocolumns and the influence of crystal defects on the initial plastic deformation of single crystal copper. The results indicate that the copper pillar exhibits a greater degree of elastic deformation during the nano compression process. At the same time, an analysis was conducted on the causes and effects of the bulging of the surrounding materials during compression of copper nanowires, and it was believed that the bulging of the surrounding materials during compression would lead to an increase in the nanohardness and measured elastic modulus values. In order to investigate the effect of uneven surface morphology on the initial plastic deformation behavior of copper nanowires, nanoscale surface defects were prepared on the surface of copper nanowires by heating method, and the nano compression experimental data of surface defects were compared and analyzed. The results showed that the existence of surface defects would greatly affect the initial plastic deformation of copper nanowires. Through transmission electron microscopy, the dislocation morphology around the compression point of copper nanowires was observed. In addition to the dislocations generated around the nanoscale compression, the coexistence of stacking faults, incomplete dislocations, and dislocation loops was also found. This indicates that the initial plastic deformation of copper nanowires is closely related to the occurrence of dislocations.