Silicon carbide SiC crystal growth equipment

Silicon carbide SiC crystal growth equipment

To achieve high qualitySiCProfessional equipment for crystal growth, high-purity raw material synthesis, and high-temperature crystal heat treatment. widely used inSiCThe fields of crystal growth, raw material synthesis, and crystal heat treatment. Can grow 6/8 inch ingots.

Silicon carbide SiC crystal growth equipment

The vacuum furnace chamber system is limited to a background vacuum value of ≤ 5.0E-5Pa and a pressure rise rate of ≤ 3Pa/12h, ensuring the stability of crystal growth

Intelligent growth and monitoring system, achieving precise customization of multiple processes, process optimization, real-time monitoring of the entire crystal growth process, and data visualization and archiving

New induction heating coil design effectively improves the uniformity and stability of thermal field heating
The PIM self checking system created by 1st in the industry effectively reduces costsWaste of process time
A stable and reliable water cooling system has been developed to achieve waterway operationReal time monitoring of pipeline temperature and flow rate ensures the stability of the growth temperature field
Can produce 6-inch P-type silicon carbide substrates and microtubesDefect density<0.5 pieces/cm²The resistivity reaches 0.015-0.0280