Internal stress detector

Capable of measuring internal stress distribution and defect screening in compound wafers

advantage

Based on the birefringence stress measurement model, achieve instantaneous stress measurement and display a pseudo color chart of the two-dimensional stress distribution

√ Adopting a dual telecentric detection optical path, the phase delay measurement accuracy is high

Multiple lenses can be selected according to different measurement field of view requirements

Customized sample tray, suitable for batch testing of wafers of different specifications

Applicable objects

Suitable for third-generation compound wafers, glass wafers, and precision optical componentsInternal stress detection of flat crystals, prisms, waveplates, lenses, etc

applications

Targeting industries such as compound wafer production and optical precision machining

Detection Principle

√ Detecting the internal stress distribution of wafer materials based on polarized light stress birefringence effect. When crystal materials lack internal componentsWhen there is stress concentration, it can cause stress birefringence effect, and polarization modulation occurs when polarized light passes through it. By measuring the Stokes vector of the transmitted light, the stress delay of the material can be calculated, and the internal stress distribution of the material can be obtained;

√ Can synchronously integrate wafer surface defect dark field detection and size measurement.