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E-mail
Wayne.Zhang@Sikcn.com
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Phone
13917975482
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Address
7th Floor, Building 7, Zhangjiang Microelectronics Port, No. 690 Bibo Road
Tiankong Scientific Instruments (Shanghai) Co., Ltd
Wayne.Zhang@Sikcn.com
13917975482
7th Floor, Building 7, Zhangjiang Microelectronics Port, No. 690 Bibo Road
Specially designed for high-throughput3DTailored for analysis and sample preparationFIB-SEM
Zeiss Crossbeam combines the powerful imaging and analytical performance of field emission scanning electron microscopy (FE-SEM) barrels with the excellent processing capabilities of the new generation focused ion beam (FIB). Whether it's cutting, imaging, or 3D analysis, the Crossbeam series can greatly enhance your application experience. With the Gemini electron optics system, you can obtain authentic sample information from scanning electron microscopy (SEM) images. The Ion scuttor FIB tube has introduced a new FIB processing method, which can reduce sample damage, improve sample quality, and accelerate the experimental process.
Whether used in scientific research institutions or industrial laboratories, single user laboratories or multi-user experimental platforms, if you want to obtain high-quality, high impact experimental results, the modular platform design of Zeiss Crossbeam allows you to upgrade the instrument system at any time according to your own needs.
Technical Specifications:
Zeiss Crossbeam 350 |
Zeiss Crossbeam 550 |
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Scanning Electron Microscope (SEM) |
Gemini I tube |
Gemini II tube |
Variable air pressure option |
Optional Tandem Decol |
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Electron beam current: 5 pA-100 nA |
Electron beam current: 10 pA-100 nA |
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Focused ion beam |
Resolution: 3 nm @ 30 kV (statistical method) |
Resolution: 3 nm @ 30 kV (statistical method) |
Resolution: 120 nm @ 1 kV&10 pA (optional) |
Resolution: 120 nm @ 1 kV&10 pA |
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detector |
Inlens SE, Inlens EsB, VPSE (Variable Pressure Secondary Electron Detector), SESI (Secondary Electron Secondary Ion Detector), aSTEM (Scanning Transmission Electron Detector), aBSD (Backscatter Detector) |
Inlens SE, Inlens EsB, ETD (Everhard Thornley detector), SESI (secondary electron secondary ion detector), aSTEM (scanning transmission electron detector), aBSD (backscatter detector), and CL (cathodoluminescence detector) |
Sample warehouse specifications and ports |
The standard sample compartment is equipped with 18 configurable interfaces |
The standard sample compartment is equipped with 18 configurable interfaces/the large sample compartment is equipped with 22 configurable interfaces |
Carrier platform |
X /Y = 100 mm |
X/Y = 100 mm / X/Y = 153 mm |
Z = 50 mm,Z' = 13 mm |
Z = 50 mm,Z' = 13 mm / Z = 50 mm,Z' = 20 mm |
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T=-4 ° to 70 °, R=360 ° |
T=-4 ° to 70 °, R=360 °/T=-15 ° to 70 °, R=360 ° |
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Charge control |
Electron beam gun |
Electron beam gun |
Local charge neutralizer |
Local charge neutralizer |
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variable pressure |
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gas |
Single channel gas injection system: Pt, C, SiOx, W, H2O |
Single channel gas injection system: Pt, C, SiOx, W, H2O |
Multi channel gas injection system: Pt, C, W, Au, H2O, SiOX, XeF2 |
Multi channel gas injection system: Pt, C, W, Au, H2O, SiOX, XeF2 |
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Storage resolution |
32 k x 24 k (using the optional ATLAS 5 3D tomography module, up to 50 k x 40 k) |
32 k x 24 k (using the optional ATLAS 5 3D tomography module, up to 50 k x 40 k) |
Optional analysis attachments |
EDS、EBSD、WDS、SIMS, If necessary, other options can also be provided |
EDS、EBSD、WDS、SIMS, If necessary, other options can also be provided |
advantage |
Due to the use of variable pressure mode and extensive in-situ experiments, sample compatibility can be significantly expanded. |
High throughput analysis and imaging can be achieved, and high resolution can be obtained under various conditions. |
