Dynamic Secondary Ion Mass Spectrometer D-SIMS | Beam Concentrator Instrument

ADEPT-1010 is designed for automatic analysis of shallow semiconductor injection and insulating thin films, and is a commonly used tool in most semiconductor development and support laboratories. By optimizing the secondary ion collection optical system and ultra-high vacuum design, the sensitivity required for doping components and common impurities in thin film structure detection is provided.

Dynamic Secondary Ion Mass Spectrometry (D-SIMS) is a high-sensitivity surface analysis technique used for solid material composition analysis.

ADEPT-1010 is designed for automatic analysis of shallow semiconductor injection and insulating thin films, and is a commonly used tool in most semiconductor development and support laboratories. By optimizing the secondary ion collection optical system and ultra-high vacuum design, the sensitivity required for doping components and common impurities in thin film structure detection is provided.

Working Principle:

The dynamic secondary ion mass spectrometer uses a focused high-energy primary ion beam (such as O ₂⁺, Cs ⁺, Ar ⁺, etc.) to bombard the sample surface, causing atoms or molecules on the sample surface to be sputtered out. During this process, some of the splashed particles become charged and form secondary ions. These secondary ions are collected and transported to a mass spectrometer for analysis, which can determine the chemical composition and elemental distribution of the sample.