4-Arc Pulling Method Single Crystal Growth Furnace

NegotiableUpdate on 01/08

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

Online Consult

Overview

The CY-AR3000BG-T 4 arc pulling method single crystal growth furnace is a single crystal growth furnace that uses a 4-arc pulling method (using Ar gas arc to melt the sample and pulling the pulling device), with a temperature of up to 3000 ℃. The chamber is made of 304 stainless steel (with water-cooled interlayer), and the vacuum degree can reach 10-5 Torr. This single crystal furnace is particularly suitable for growing high melting point single crystals, such as Ti single crystals, YSZ, SiC, CeRh2Si, and so on.

Product Details

CY-AR3000BG-T4-Arc Pulling Method Single Crystal Growth FurnaceIt is a single crystal growth furnace using a 4-arc pulling method (using Ar gas arc to melt the sample, pulling device pulling), with a temperature of up to 3000 ℃. The chamber is made of 304 stainless steel (with water-cooled interlayer), and the vacuum degree can reach 10-5 Torr. This single crystal furnace is particularly suitable for growing high melting point single crystals, such as Ti single crystals, YSZ, SiC, CeRh2Si, and so on.

Technical Specifications:

CY-AR3000BG-T4-Arc Pulling Method Single Crystal Growth Furnace
Cavity	1. Adopting a 304 stainless steel chamber with a water-cooled interlayer, it can be filled with cooling water 2. There is a quartz window installed on the cavity for observing the sample 3. Vacuum degree of the cavity: 10-5Torr (using a molecular pump) 4. Chamber size: Φ 257 * 360mm
Vacuum gauge	1. There are digital anti-corrosion vacuum gauges and mechanical pressure gauges installed on the cavity
Electric arc gun	1. There are 4 arc guns in total, which can provide a uniform temperature field for the sample (all arc guns are equipped with cooling water) 2. The diameter of the tungsten electrode is Φ 4mm 3. The angle and distance of the arc chamber to the sample can be manually adjusted 4. Arc starting power supply: 18V/185A voltage 380V 5. Melting temperature can reach 3000 ℃
Sample stand	1. Using water-cooled copper crucible 2. The sample size that can be input is 60g (calculated based on iron)
Pulling mechanism	1. Controller controls the pulling speed, rotation speed, and rotation speed of the lifting mechanism 2. Lifting speed: 0.2-10mm/h 3. Lifting stroke: 0-70mm 4. Speed: 0-40 RPM
Control unit	1. Can display and set parameters for single crystal growth (arc current, pulling rod speed, pulling stroke, and speed)
Vacuum pump	1. The equipment is equipped with a molecular pump system (mechanical pump+vortex molecular pump) 2. Extraction rate: 100L/S 3. Can achieve a vacuum level of 10-5 Torr in the device cavity within 40 minutes
Circulating water cooler	1. Power: 800W 2. Water flow rate: 58L/min 3、制冷能力： 5004W（17500Btu/hour） 4. Temperature control: 5-30 ° C
Equipment size: 800mm (L) * 800mm (W) * 1500mm (H)