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instrumentb2bThe efficiency of scraping FAPbI3 reaches 25.2%! The Zhejiang University team set a new record with the use of Leibo plasma cleaning machine and coating machine!
Article Introduction
刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!
刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

The team led by Chen Hongzheng from Zhejiang University has published a research paper titled "Bimolecular Amines Vapor Passivation for Efficient Perovskite Solar Cells Based on Blade Coated FAPbI3" in Energy&Environmental Science. They innovatively proposedBimolecular amine vapor passivation (BAVP)The technology has successfully achieved the efficient preparation of large-area perovskite cells, and also demonstrated excellent stability of the cells under high temperature conditions.

Large scale preparation using Leibo products
刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

After cleaning, the ITO substrate is dried in an air oven and then usedPlasma cleaning machinePT40K-BEProcess for 30 seconds and then put into use.

刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

When preparing perovskite thin films, the precursor solution is coated onto the surface of ITO/NiOx/Me-4PACz substrate at a moving speed of 15 millimeters per second, and then a dry air knife is used in a low humidity environmentPF200-H Perovskite Coating MachinePerform quenching treatment.


刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!


research findings

Test data shows that batteries treated with BAVP not only achieve25.2%ofexcellentEfficiency and stability are equally excellent - after 2616 hours and 500 cycles of -5 to 55 ° C at 85 ° C, the efficiency retention rates of unpackaged devices are as high as99.4%and97.5%This significantly demonstrates the application prospects of this strategy in improving the comprehensive performance of batteries.


刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!


Original image
刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

(a) A schematic diagram of the bimolecular amine vapor passivation (BAVP) process, demonstrating how 2- (PEA) and (EDA) interact with perovskite films.

(b) Schematic diagram of PEA adsorption on the surface of perovskite terminated by PbI2.

(c) Schematic diagram of EDA adsorption on the surface of perovskite terminated by PbI2.

(d) Gibbs free energy curve of PEA and FA+reaction.

(e) Gibbs free energy curve of EDA and FA+reaction.


刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

(a) X-ray photoelectron spectroscopy (XPS) analysis showed the binding energy changes of Pb 4f in perovskite films treated with PEA, EDA, and BAVP.

(b) Kelvin Probe Force Microscopy (KPFM) images of perovskite thin films treated with solution passivation and (c) BAVP.

(d) Depth resolved grazing incidence X-ray diffraction (GIXRD) spectra of perovskite films treated with control group, (e) BAVP treatment, and (f) solution passivation treatment.


刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

(a) Energy level alignment diagram of perovskite thin films under different amine treatments.

(b) The difference between the conduction band bottom and Fermi level of perovskite thin films under different treatments.

(c) Steady state photoluminescence (PL) spectra.

(d) Time resolved photoluminescence (TRPL) decay curve.

(e) PL quantum yield (PLQY) value.

PL intensity distribution of perovskite films treated with different passivation methods (f-h).


刮涂FAPbI3效率达25.2%!浙大团队使用雷博等离子清洗机与涂膜机创下新纪录!

(a) The device structure of the inverted perovskite solar cell used in this study.

(b) J-V curves of small area devices with untreated and different amine treatments.

(c) J-V curves of devices treated with solution based and vapor based passivation methods.

(d) Representative photoelectric conversion efficiency (PCE) of inverted perovskite solar cells and modules prepared by scratch coating method.

(e) External quantum efficiency (EQE) spectra of small area devices treated with different passivation methods.

(f) J-V curves and images of perovskite solar modules treated with different passivation methods. (g) Electrochemical impedance spectroscopy (EIS) of untreated and devices treated with different amines.

(h) Transient photocurrent (TPC) of untreated and different amine treated devices.

(i) Space charge limited current (SCLC) characteristics of electronic only devices with untreated and different amine treatments.



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