photoresist

RZJ-304photoresistIt is a positive product produced by Suzhou RuihongphotoresistHere is a detailed introduction:
component
It is mainly composed of propylene glycol methyl ether acetate, cresol formaldehyde phenolic resin (CAS-NO.9016-83-5, concentration 21%), and the ester of 6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonic acid and 2,3,4-trihydroxybenzophenone (CAS-NO.68510-93-0, concentration 6%)
Performance characteristics
High lithography accuracy: capable of achieving finer lithography patterns, with line widths and spacings that can reach smaller sizes, suitable for micro nano processing techniques that require high lithography accuracy, such as integrated circuit manufacturing, microelectromechanical systems (MEMS) processing, and other fields
Good resolution: With good resolution, it can clearly transfer the graphics on the mask to the substrate, and can also present complex graphic structures well, which helps to manufacture high-precision and high-performance micro nano devices
Strong process adaptability: It can adapt to various photolithography process conditions, such as different exposure energies, development times, etc. Within a certain range of process parameters, stable and reliable photolithography effects can be obtained, which makes it highly adaptable to different production environments and process requirements
Good adhesion to the substrate: It has good adhesion to common semiconductor substrate materials such as silicon wafers and can firmly adhere to the substrate surface, making it less likely to occur during photolithographyphotoresistThe phenomenon of detachment or peeling ensures the integrity and accuracy of the photolithography pattern.
Technical specifications
Viscosity: There are two specifications to choose from: 25mpa · s and 50mpa · s
Used developer: RZX-3038
Recommended process conditions
Coating: At a temperature of 23 ℃, using spin coating method, a film thickness of 1.0-3.5 μ m can be obtained.
Pre baking: Bake on a hot plate at 100 ℃ for 90 seconds.
Exposure: The exposure energy is 50-75mj/cm ².
Development: At 23 ℃, use RZX-3038 developer for 1 minute, which can be sprayed or immersed.
Cleaning: Rinse with deionized water for 30 seconds.
Post baking: Bake on a hot plate at 120 ℃ for 120 seconds.