Power Device Analyzer

1.Product Overview:

with B1506APower Device AnalyzerFor example, it is a complete power circuit design solution125Can evaluate numerous parameters of power devices under different working conditions, such as up to Operating range of 3kV/1500A, capable of measuring IV parameters (breakdown voltage and on resistance), with the ability to measure three terminal capacitance (such as Ciss, Coss, Crss, etc.), gate charge (Qg), and power loss under high voltage bias. It also supports fully automatic rapid thermal testing from -50 ° C to+250 ° C.

2.equipmentapplication：

Research and development field: Assist engineers in accurately measuring and analyzing various characteristic parameters of power semiconductor devices during the design phase, such as on resistance, breakdown voltage, capacitance characteristics, gate charge, etc., to provide data support for optimizing design and accelerate the research and development process.

Production process: used for large-scale quality inspection and screening of power devices to ensure that product performance and quality meet standards, improve production efficiency and product yield5.

Failure analysis: When a power device malfunctions during use, the analyzer can be used to conduct detailed testing and analysis of the device, identify the cause and location of the failure, and provide a basis for improvement and repair5. For example, in the "three electric systems" of new energy vehicles, testing of power semiconductors is crucial.

3. Equipment characteristics

Capable of performing accurate measurements under various working conditions

Integrated solutions can characterize up to 1500 A and 10 kV power devices can be used for mid-range current measurement under high voltage bias (e.g. 500 mA at 1200 V), with the ability to accurately measure current below picoampere under high voltage bias. Fully automatic thermal testing is available from -50 ℃ to+250 ℃

Extensive device evaluation capabilities

In Gundam 3000 VFully automatic capacitance under DC bias（CissTheCossTheCrssMeasurement (etc.)

short 10 MsHigh power pulse measurement

On packaged devices and wafers IGBT/FETGate charge measurement

Used to characterize GaNHigh voltage of current collapse effect/High current quick switch option

Up to five high voltages（3 kV）Source table channel enhances flexibility on the ground

Conduct safe temperature related tests using test fixtures equipped with interlocking devices

Higher measurement efficiency

Switching between high voltage measurement and high current measurement without reconnecting cables

Automatically generate test circuits for testing the transistor junction capacitance of packaged devices and devices on wafers（CissTheCossTheCrssTheCgsTheCgdTheCdsEtc.)

Standard test fixture with interlock device for safe testing of packaged power devices

High power testing on supported and secure wafers, with current exceeding 200 AThe voltage is as high as10 kV

The oscilloscope view allows you to verify the input voltage and current waveforms

in MS WindowsRunning in the environmentEasyEXPERTSoftware helps improve data management and analysis

Scalable and upgradable hardware architecture

Multiple measurement modules to choose from

Supports up to 6 A high-power device with one pin