- Phone
-
Address
Room 208, Building 5, No. 88 Rongbei Road, Songjiang District, Shanghai
Product Categories
Shanghai Zengjun Industrial Co., Ltd
Tonghui TH521 Semiconductor Parameter Analyzer
NegotiableUpdate on 05/15
- Model
- Nature of the Manufacturer
- Producers
- Product Category
- Place of Origin
Overview
The TH521 semiconductor parameter analyzer from Tonghui is a comprehensive solution for circuit design, which can help power electronic circuit designers choose power devices suitable for their own applications and maximize the value of their power electronic products. It can evaluate all relevant parameters of the device under different operating conditions, including IV parameters (breakdown voltage and on resistance), three terminal FET capacitance, gate charge, and power loss. The TH521 series semiconductor parameter analyzer used for circuit design has complete curve tracking function and other functions.
Product Details
Tonghui TH521 Semiconductor Parameter AnalyzerIntroduction：
Tonghui TH521 Semiconductor Parameter AnalyzerIt is a comprehensive solution for circuit design, which can help power electronic circuit designers choose power devices suitable for their own applications and maximize the value of their power electronic products. It can evaluate all relevant parameters of the device under different operating conditions, including IV parameters (breakdown voltage and on resistance), three terminal FET capacitance, gate charge, and power loss. The TH521 series semiconductor parameter analyzer used for circuit design has complete curve tracking function and other functions.
The TH521 series can achieve a maximum output voltage of ± 3500V and a maximum output current of ± 1800A. The minimum resolution for voltage measurement is 100nV, and the minimum resolution for current measurement is 10fA. For capacitance measurement, the maximum bias voltage of the collector can reach ± 3500V, and the maximum measurement frequency can reach 10MHz.
performance characteristics
TH521The conventional characteristics
·Gundam3.5kV/1800AThe broad scope of work
from-50°Cto+250°CFully automatic and rapid thermal testing
·Technical documentation for automatically creating power devices (semiconductors and components)
·The automatic recording function can prevent data loss
·AlAssist in writingpythontest script
TH521IVPackage Features
·Fully automatic and fast processing of packaging and on-chip devicesIVmeasurement
(RonTheBVLeakageVthTheVsatwait)
·NarrowIVPulse width (narrowest) 10Ms）Can prevent the device from self heating and measure more accurately
Test the actual performance of the device
·Oscilloscope view (time domain view) can monitor actual voltage/Current pulse waveform, to
Make accurate measurements
*Configuration can be flexibly expanded and addedCVandQgAdjust the current range from20Aexpand
to200AThe600Aor1800A
TH521Complete features of the kit
·IVAll features of the kit
·Measuring packaged devices3.5kVThe input, output, and reverse transmission capacitance of the transistor
(CissTheCossTheCrssTheCiesTheCoesTheCres）And gate resistance(Rg)
·Measure the gate charge of packaged devices（Qg）Curve
·Calculate power losses (conduction, driving, and switching losses)
application field
·Semiconductor power devices
Diodes, transistorsMOSFETTheIGBTThyristor, Integrated Circuit, Optical
Parasitic capacitance testing of electronic chips, etcC-Vfeature analysis
·Semiconductor materials
Wafer cuttingC-Vfeature analysis
·Liquid material
Elastic constant analysis, liquid crystal cutting
·Capacitive components
capacitorC-VCharacteristic testing and analysis, capacitive sensor testing and analysis
H521Series semiconductor parameter analyzer technical parameters:
MCSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/Measurement accuracy（% + mV + mV） |
*high current |
200mV |
100nV |
±(0.06 + 0.14 + Io x 0.05) |
1A |
2V |
1MV |
±(0.06 + 0.6 + Io x 0.5) |
1A |
20V |
10MV |
±(0.06 + 3 + Io x 5) |
1A |
40V |
40MV |
±(0.06 + 3 + Io x 10) |
1A |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
10MA |
10pA |
±(0.06+ 1E-8 + Vo x 1E-10) |
30V |
100MA |
100pA |
±(0.06 + 2E-8 + Vo x 1E-9) |
30V |
1mA |
1nA |
±(0.06 + 2E-7 + Vo x 1E-8) |
30V |
10mA |
10nA |
±(0.06 + 2E-6 + Vo x 1E-7) |
30V |
100mA |
100nA |
±(0.06 + 2E-5 + Vo x 1E-6) |
30V |
1A |
1uA |
±(0.4 + 2E-4 + Vo x 1E-5) |
30V |
Typical Resolution |
6½bit |
||
*High voltage |
±30V |
||
*low current |
10pA |
||
Pulse * high duty cycle |
5%(Peak value exceeds)100mAtime） |
||
Pulse * small width |
10Ms |
||
Pulse * large width |
100ms(Peak value exceeds)100mAtime） |
||
DC * high current |
±100mA |
||
Pulse * peak value |
±1A |
||
Pulse * large base value |
±50mA(Peak value exceeds)100mAtime） |
||
HCSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/Measurement accuracy（% + mV + mV） |
*high current |
200mV |
100nV |
±(0.06 + 0.6 + Io x 0.05) |
20A |
2V |
1MV |
±(0.06 + 0.6 + Io x 0.5) |
20A |
20V |
10MV |
±(0.06 + 3 + Io x 5) |
20A |
40V |
40MV |
±(0.06 + 3 + Io x 10) |
1A |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
10MA |
10pA |
±(0.06+ 1E-8 + Vo x 1E-10) |
40V |
100MA |
100pA |
±(0.06 + 2E-8 + Vo x 1E-9) |
40V |
1mA |
1nA |
±(0.06 + 2E-7 + Vo x 1E-8) |
40V |
10mA |
10nA |
±(0.06 + 2E-6 + Vo x 1E-7) |
40V |
100mA |
100nA |
±(0.06 + 2E-5 + Vo x 1E-6) |
40V |
1A |
1MA |
±(0.4 + 2E-4 + Vo x 1E-5) |
40V |
20A |
20MA |
±(0.4 + 2E-3+Vo x 1E-4) |
20V |
Typical Resolution |
6½bit |
||
*High voltage |
±40V |
||
*low current |
10pA |
||
Pulse * high duty cycle |
1%(Peak value exceeds)1Atime） |
||
Pulse * small width |
50Ms |
||
Pulse * large width |
1ms(Peak value exceeds)1Atime） |
||
DC * high current |
±100mA |
||
Pulse * peak value |
±20A |
||
Pulse * large base value |
±100mA(Peak value exceeds)1Atime） |
||
MPSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/Measurement accuracy（% + mV + mV） |
*high current |
100mV |
100nV |
±(0.06 + 0.14 + Io x 0.05) |
100mA |
1V |
1MV |
±(0.06 + 0.6 + Io x 0.5) |
100mA |
10V |
10MV |
±(0.06 + 3 + Io x 5) |
100mA |
100V |
100MV |
±(0.012 + 2.5 + Io x 10) |
20mA(≥40V) 50mA(≤40V) |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
1nA |
1fA |
±(0.1 + 2E-13 + Vo x 1E-15) |
100V |
10nA |
10fA |
±(0.1 + 1E-12 + Vo x 1E-14) |
100V |
100nA |
100fA |
±(0.05 + 2E-11 + Vo x 1E-13) |
100V |
1MA |
1pA |
±(0.05 + 1E-10 + Vo x 1E-12) |
100V |
10MA |
10pA |
±(0.04 + 2E-9 + Vo x 1E-11) |
100V |
100MA |
100pA |
±(0.03 + 3E-9 + Vo x 1E-10) |
100V |
1mA |
1nA |
±(0.03 + 6E-8 + Vo x 1E-9) |
100V |
10mA |
10nA |
±(0.03 + 2E-7 + Vo x 1E-8) |
100V |
100mA |
100nA |
±(0.04 + 6E-6 + Vo x 1E-7) |
20V |
Typical Resolution |
6½bit |
||
*High voltage |
±100V |
||
*low current |
1fA |
||
HVSMU | |||
Voltage range, resolution, and accuracy | |||
Voltage range |
output/Measurement resolution |
output/measurement accuracy±(%+mV) |
*high current |
200V |
200uV |
±(0.03+40) |
10mA |
500V |
500uV |
±(0.03+100) |
10mA |
1500V |
1.5mV |
±(0.03+300) |
10mA |
3500V |
3.5mV |
±(0.03+600) |
5mA |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
*high voltage |
10nA |
10fA |
±(0.1 + 1E-9 + Vo x 8E-12) |
3500V |
1MA |
1pA |
±(0.05 + 1E-9 + Vo x 8E-12) |
3500V |
100MA |
100pA |
±(0.03 + 3E-9 + Vo x 1E-11) |
3500V |
10mA |
10nA |
±(0.03 + 2E-7+ Vo x 1E-9) |
1750V |
Typical Resolution |
6½bit |
||
*High voltage |
±3500V |
||
*low current |
10fA |
||
UHCU | ||
Voltage range, resolution, and accuracy | ||
Voltage range |
output/Measurement resolution |
output/measurement accuracy±(%+mV) |
60V |
100MV |
±(0.2+10) |
Current range, resolution, and accuracy |
output/Measurement resolution |
output/Measurement accuracy（%+A+A） |
200A |
200MA |
±(0.6 + 0.3 + 0.01*Vo) |
600A |
500MA |
±(0.6 + 0.3 + 0.01*Vo) |
1800A |
2mA |
±(0.8 + 0.9 + 0.02*Vo) |
Pulse * high duty cycle |
0.4%（600ARange);0.1%（1800Arange） |
|
Pulse * small width |
10Ms |
|
Pulse * large width |
1ms（600ARange);500Ms（1800Arange） |
|
Pulse * peak value |
200AThe600AThe1800Arange |
|
MFCMU | ||
|
frequency |
frequency range |
1kHz~10MHz |
*Low frequency resolution |
1mHz |
|
Frequency accuracy |
±0.05% |
|
|
AClevel |
Level range |
0~250mV |
resolution |
0.1mVrms |
|
precision |
±(10%*set value+2mV) |
|
|
DCbias |
scope |
0±25V |
resolution |
1mV |
|
accuracy |
1%*Set voltage+8mV |
|
output impedance |
100Ω |
|
Test end configuration |
Four end pairing |
|
Test time |
fast2.5msmedium speed90msslow speed220ms |
|
capacitance |
display range |
0.00001pF~9.99999F |
*High accuracy |
0.05% |
|
TH521Selection Table for Series Semiconductor Parameter Analyzer:
TH521-35-20 |
IV: 3500V/20A |
TH521-35-20C |
IV: 3500V/20A, CV: 10MHz, Qg |
TH521-35-200 |
IV: 3500V/200A |
TH521-35-200C |
IV: 3500V/200A, CV: 10MHz, Qg |
TH521-35-600 |
IV: 3500V/600A |
TH521-35-600C |
IV: 3500V/600A, CV: 10MHz, Qg |
TH521-35-1800 |
IV: 3500V/1800A |
TH521-35-1800C |
IV: 3500V/1800A, CV: 10MHz, Qg |
Similar Product Recommend
