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Ingelhead Analytical Technology Co., Ltd

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    235 Licheng Work Area, No. 8 Sijiqing Road, Haidian District, Beijing

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TOF qSIMS time-of-flight secondary ion mass spectrometer

NegotiableUpdate on 05/06
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Overview

The TOF qSIMS time-of-flight secondary ion mass spectrometer is designed for surface and depth analysis applications of various materials, including polymers, drugs, superconductors, semiconductors, alloys, optical and functional coatings, and dielectrics, with a detection limit below 1ppm.

Product Details

HidenTOF-qSIMSFlight time secondary ion mass spectrometerDesigned for surface and depth analysis applications of various materials, including polymers, drugs, superconductors, semiconductors, alloys, optical and functional coatings, and dielectrics, with a detection limit below 1ppm.


The TOF qSIMS Workstation includes quadrupole mass spectrometry and time-of-flight mass spectrometry.

Quadrupole qSIMS is mainly used for doping depth analysis and thin layer analysis, with low incident capacity, high incident current, continuous sputtering and analysis, and is a typical dynamic SIMS.

Time of flight secondary ion mass spectrometry TOF-SIMS uses time-of-flight mass spectrometry, which has a wide range of mass numbers, high mass resolution, and fast measurement speed (obtaining the full spectrum in an instant). The ion gun only requires one pulse sputtering to obtain the full spectrum, with almost no destructive effect on the surface. Due to pulse mode analysis and low current, the secondary ion ratio generated is relatively low, and the sensitivity is weaker compared to dynamic SIMS. However, it has strong imaging and surface analysis capabilities, making it a typical static SIMS of Stactic SIMS.


TOF-qSIMSFlight time secondary ion mass spectrometerBy integrating the advantages of Quadrupole SIMS and TOF-SIMS, all conductors, semiconductors, and insulation materials can be analyzed; Provide a series of extended functions such as ultra shallow depth analysis, trace element and component measurement for thin layers of composite materials such as silicon, high-k, silicon germanium, and III-V compounds. For the surface composition and distribution of materials/products, it has good characterization ability for surface added components, impurity components, surface multi-layer structure/coating components, surface foreign matter residues (pollutants, particles, corrosives, etc.), surface trace doping, surface modification, surface defects (scratches, protrusions), etc.


A SIMS simultaneously provides quadrupole mass spectrometry and time-of-flight mass spectrometry:

Static SIMS

Dynamic SIMS

Ar+, O2+, Cs+, Ga+and other ion guns

Sample 3D imaging analysis

Detection limit below ppm

SNMS ion source, secondary neutral particle spectrum

Secondary ion mass spectrometry imaging software, static secondary ion mass spectrometry library, secondary ion mass spectrometry post-processing software