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Gaosmo (Chengdu) International Trade Co., Ltd

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    Room 4527, Block C, Oriental Hope Tianxiang Plaza, No. 500-1, Tianfu Avenue Middle Section, High tech Zone, Chengdu City, Sichuan Province

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Spectral interference wafer film thickness gauge

NegotiableUpdate on 05/07
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Overview

Spectral interference wafer film thickness gauge $r $n real-time detection of WAFER substrate film thickness during grinding process, glass substrate thickness change during thinning process (in strong acid environment). Product features Non contact, non-destructive optical film thickness detection using spectral interference method for high detection reproducibility

Product Details

Spectral interference wafer film thickness gauge

Spectral interference wafer film thickness gauge


Real time detection of WAFER substrate thickness during grinding process, glass substrate thickness changes during thinning process (in strong acid environment), product features non-contact and non-destructive optical film thickness detection, using spectral interferometry to achieve high detection reproducibility


Product Features

Non contact, non-destructive optical film thickness detection
Using spectral interferometry to achieve high detection reproducibility
● Can perform high-speed real-time grinding detection
● Detection that can pass through intermediate layers such as protective films and observation windows
● Can correspond to long working distances and is easy to install in production lines or equipment
Small size, space saving, and easy equipment installation
● Can correspond to external signal triggering requirements for online detection
● Adopt a unique analytical algorithm suitable for film thickness detection.
● Automatic mapping of film thickness distribution (optional item)


Specification and style

model SF-3/200
SF-3/300
SF-3/800
SF-3/1300
size 123(W)x 224(D)x 128(H)mm
Thickness range for silicon wafer measurement 6~400μm
10~775μm
20~1000μm
50~1300μm
Resin thickness range 10~1000μm
20~1500μm
40~2000μm
100~2600μm
Minimum sampling period 5kHz(200μsec)
repeatability accuracy 0.01% or less (* 1)
Measure the diameter of the light spot Over 20 μ m in diameter (* 2)
measure distance 50 、80、120、150 、200mm
light source
Semiconductor light source (laser Class3B)
analytical method FFT analysis method
interface
LAN, I/O ports
power supply
DC24V (AC power supply needs to be purchased separately)
Optional accessories
Multiple testing distance sleeves, power supply units (for AC), AL benchmarks, testing light detection targets, fiber optic cleaners

*1: The relative standard deviation of the initial standard sample measured in an air gap of approximately 1000 μ m (n=20)

*2: Design value for WD80 mm probe specification