Laser scanning defect spectrometer

NegotiableUpdate on 01/27

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

Online Consult

Overview

The Laser Scanning Defect Imager is an upgraded version of Laser Beam Induced Current (LBIC) testing. It uses a laser beam with a wavelength energy greater than the semiconductor bandgap to irradiate the semiconductor, generating electron hole pairs. By quickly scanning the surface of the sample, the image distribution revealing internal current changes can be obtained to analyze the distribution of various defects. This helps to analyze the quality of sample preparation and contributes to process improvement.

Product Details

Product Introduction

Master the whole picture within 4 minutes, scan the 100mm x 100mm area with a resolution of 50 microns

　　excitelightThe Scanning Defect Imager is an upgraded version of Laser Beam Induced Current (LBIC) testing. It uses a laser beam with a wavelength energy greater than the semiconductor bandgap to irradiate the semiconductor, generating electron hole pairs. By rapidly scanning the surface of the sample, the image distribution revealing internal current changes can be obtained to analyze the distribution of various defects. This helps to analyze the quality of sample preparation and contributes to process improvement.

feature

●Scanning the distribution of photocurrent

●Scanning photovoltaic voltage distribution

●Scan the distribution of open circuit voltage and short circuit current

●Analyze surface pollution

●Analyze the distribution of short-circuit areas

●Identify and analyze microcrack areas

●Analyze the distribution of diffusion lengths of a few carriers (function selection)

application

雷射扫描缺陷图谱仪

Photovoltaic current distribution of silicon solar cells (405 nanometers)

雷射扫描缺陷图谱仪

6-inch silicon crystal solar cell scan (17 seconds)

雷射扫描缺陷图谱仪

Perovskite solar cells

雷射扫描缺陷图谱仪

LSD4-OPV photoresponsive current distribution diagram

雷射扫描缺陷图谱仪

LSD4-OPV photoresponsive current distribution diagram

Non uniformity analysis with a resolution of 50 µ m

Busbar/grid aspect ratio detection (cross-sectional analysis)

High repeatability (6 repetitions)

Specifications

project	Parameter description.
function	A. Utilizing laser beams with wavelengths higher than the bandgap of semiconductors to generate electron hole pairs, exploring the impact of depletion regions on internal current changes, understanding and analyzing various defect distributions, as a direction for process improvement. b. Capable of scanning the distribution of photocurrent on the surface of the sample. C. Capable of scanning the distribution of photovoltage on the surface of the sample. d. Can scan the distribution of open circuit voltage and short circuit current. e. Capable of analyzing surface pollution. F. Can analyze the distribution of short-circuit areas. G. Capable of identifying and analyzing microcrack areas. H. Ability to analyze the distribution of minority carrier diffusion length (optional).
motivation source	405 ± 10nm laser 520 ± 10nm laser 635 ± 10nm laser 830 ± 10nm laser
Scan Area	≧100mm×100mm
laser spot size	Approaching TEM00 mode point
Surveying resolution	A. Scanning resolution ≤ 50 µ m b. The scanning resolution can be set through software
Surveying time	<4 minutes (100mm x 100mm, resolution 50um)
aspect	60cm * 60cm * 100cm
software	A. LBIC 3D visualization b. 2D cross-sectional analysis (electrode aspect ratio) c. Analysis of photocurrent response distribution (combined with long wavelength laser source) d. Data saving and exporting function