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E-mail
qeservice@enli.com.tw
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18512186724
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Guangyan Technology Co., Ltd
Excellent Quantum Efficiency and Parameter Analysis System for Photodetectors
NegotiableUpdate on 01/27
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Overview
APD-QE adopts beam spatial intensity technology and utilizes the "Irradiance Mode" testing method developed by ASTM standards to form a complete solution for measuring the full spectral efficiency of micrometer level optical sensors with various excellent probe platforms. APD-QE has been applied in the testing of various excellent light sensors, such as iPhone exposure and its various light sensors, Apple Watch blood oxygen light sensor, TFT image sensor, source dynamic pixel sensor (APS), high-sensitivity switchable X-ray sensor, etc.
Product Details
Product Introduction
With the rise and popularity of 5G and mobile devices, more and more new types of optical sensors are being applied in our daily lives. In order to be able toBetter applied on mobile devices, these excellent light sensors have components with smaller photosensitive areas. But these applications have increasingly high requirements for the optical sensing performance of excellent optical sensors. During the process of shrinking the photosensitive area, it also brings about precise inspection of quantum efficiencyChallenge. For example, traditional spotlight type small spots can cause focal displacement of up to mm due to dispersion differences at different wavelengths. It is difficult to focus all photons onto a micrometer level photosensitive area. Therefore, it is difficult to accurately measure the full spectrum quantum efficiency curve.
APD-QE adoptsspecializedThe beam space homogenization technology utilizes the ASTM standard Irradiance Mode testing method to form a complete micro scale optical sensor full spectrum quantum efficiency testing solution with various excellent probe stations. APD-QE has been applied in the testing of various excellent light sensors, such as iPhone LiDAR and its various light sensors, Apple Watch blood oxygen light sensor, TFT image sensor, active active pixel sensor (APS), high-sensitivity indirect conversion X-ray sensor, etc.
PEM™ （Photon-Energy Modulator） 简介This is a revolutionary solution aimed at taking your quantum efficiency testing and spectral analysis to new heights. This innovative tool can precisely control photon flux and energy, ensuring accurate and reliable results at various wavelengths.
The challenges of traditional QE systems in testing new optoelectronic sensors:
Most quantum efficiency systems on the market are in "power mode".
With the widespread popularity of mobile devices, excellent optoelectronic sensors such as APD, SPAD, ToF, etc. have miniaturized component light receiving areas, with effective light receiving areas ranging from tens of micrometers to hundreds of micrometers (10um~200um).
3. The "power mode" of beam focusing is used to check the problems of small area excellent photodetectors:
a. It is difficult to achieve an absolute EQE value by injecting all photons into the effective light receiving area at the micrometer level (which cannot meet the requirements of power mode).
b. In spotlight mode, it is difficult to overcome inspection errors caused by optical dispersion, spherical aberration, and other factors. =>The EQE spectral curve is incorrect.
c. Difficult to integrate probe stations.
feature
The 'Irradiance Mode' using a uniform light source complies with ASTM E1021
Replacing traditional focused small light sources, it can test grade optoelectronic detectors.
The equilibrium spot can overcome the problems of dispersion and aberration, and accurately measure the EQE curve
Can be paired with multiple probe systems to achieve non-destructive and rapid testing.
Integrate optical and testing systems to improve system construction efficiency.
Integrated automated testing software, automatic spectrum saving and detection, high work efficiency.
Test features:
Environmental Efficiency EQE
- Spectral response SR
- IV curve detection
NEP Spectral Detection
- D * Spectral Detection
Noise Current Frequency Response Diagram (A/Hz)-1/2; 0.01Hz~1,000Hz）
–Flicker noise, Johnson Noise, Shot noise 分析
Enlitech's expert team at Guangyan Technology has rich laboratory experience and technical knowledge, and can guide customers in precision testing online or on-site. For example, through detailed analysis of noise current frequency maps, Enlitech helps customers identify potential testing errors, optimize testing parameters, and improve testing accuracy and reproducibility.
Enlitech is well aware that precise testing is crucial for product development and quality control in the field of optoelectronics. Customers often feel confused when facing tests such as noise current frequency, quantum efficiency (EQE), detectability (D *), and noise equivalent power (NEP) due to complex instrument calibration and unstable data. Enlitech provides comprehensive solutions to address these pain points.
The EQE and D * indicators directly affect the sensitivity and performance of photodetectors, which are particularly important in high-tech fields such as semiconductors, communications, and aerospace. Accurate testing data can not only help customers improve product quality, but also reduce product development cycles and save costs.
professional technology
Customized spot size and light intensity
The quantum efficiency inspection system of Guangyan Technology APD-QE spectrometer can achieve the following light intensity and average light intensity under the conditions of direct beam size of 25mm and working distance of 200mm. At a wavelength of 530nm, the light intensity can reach 82.97uW/(cm2).
| Wavelength (in nanometers) | Half width at half maximum (nm) | Light average U%=(Mm)/(M+m) | |
| 5mm x 5mm | 3mm x 3mm | ||
| 470 | 17.65 | 1.6％ | 1.0％ |
| 530 | 20.13 | 1.6％ | 1.2％ |
| 630 | 19.85 | 1.6％ | 0.9％ |
| 1000 | 38.89 | 1.2％ | 0.5％ |
| 1400 | 46.05 | 1.0％ | 0.5％ |
| 1600 | 37.40 | 1.4％ | 0.7% |
The average light intensity measured by the APD-QE detector quantum efficiency testing system under the conditions of a spot diameter of 25mm and a working distance of 200mm.
Guangyan Technology has independent optical design capabilities. Spot and light intensity can be customized in the content. Please contact us if needed.
Quantitative control function:
The APD-QE optical sensor quantum efficiency detection system has a "quantitative" function (optional), and users can control the number of monochromatic photons to make the number of photons at each wavelength the same and conduct tests. This is also the unique technology of APD-QE optical sensor quantum efficiency detection system, which other manufacturers cannot achieve.
Using quantitative sub number control mode (CP control mode), the sub number variation can be less than 1%
System specifications
◆Integration of uniform light system and probe station:
◆High average light spot:The uniform light system using Fourier transform optical elements can equalize the spatial distribution of monochromatic light intensity. At an area of 10mm x 10mm and a detection intensity of 5 x 5, the non-uniform potential at 470nm, 530nm, 630nm, and 850nm can all be less than 1%. The inconsistency potential can be less than 4% when measuring the light intensity in a 20mm x 20mm area with 10 x 10 moments.
◆PDSW software
The PDSW software adopts the new SW-XQE software platform, which can perform various automated detections, including EQE, SR, IV, NEP, D *, rate noise current map (A/Hz1/2), noise analysis, etc.
▌EQE testing
The EQE testing function can perform different monochromatic wavelength tests and automatically test the full spectrum EQE.
▌ IV check
The software supports multiple SMU controls, automatically performs light IV testing and dark IV testing, and supports multi image display.
D * and NEP
Compared to other QE systems, APD-QE can directly detect and obtain D * and NEP.
Rate Noise Current Curve
▌ Upgradeable software
Upgrade the FETOS software interface (optional) to test photo FET components on both 3 and 4 terminals.
Internal integrated probe station
The APD-QE system, with its excellent optical system design, can form multiple probe stations. All optical components of the full wavelength spectrometer are integrated into a sophisticated system. The monochromatic optical instrument is led to the probe station's light shield box. The image shows the basic probe station components of MPS-4-S, equipped with a 4-inch vacuum suction disk and 4 probe micro locators with low-noise three-axis electronics.
The integrated probe station displays a microscope and manually slides to switch to the position of the tested device. After using the sliding condition, the monochromatic light source is "fixed" in the design position. Micro images can be displayed on the screen, making it convenient for users to make good connections.
Customizable integration of multiple probes and shading dark boxes:
A. Customized isolation and shading box.
B. Due to the excellent PD estimation response speed, the effective area needs to be small (reducing capacity efficiency), therefore, there is a need to integrate probe stations.
C. Can integrate different semiconductor analysis instruments such as 4200 or E1500.
application
●Photodetectors in LiDAR
InGaAs optoelectronic two-dimensional/SPAD (single photon avalanche diode)
Apple Watch Light Sensor
● Photodiode gated transistor for high gain sensing and imaging
High frequency inductance gain and fill factor optical sensitivity analyzer
Characterization of high-sensitivity X-ray detectors
Silicon Optics
InGaAs APD (Avalanche Photodiode)
Application 1: External quantum efficiency of photodiodes in LiDAR and other sensors on iPhone 12:
Application 2: Photodiode Gated Transistors for High Gain Sensing and Imaging:
In optical sensing and imaging applications, in order to improve sensitivity and SNR, APS (active pixel sensor) includes a photodetector or a photodiode and several transistors, forming a multi-component circuit. One important unit, the intra pixel amplifier, also known as the source follower, must be used. Since its inception, APS has evolved from a three tube circuit to a five tube circuit to address issues such as blurring and reset noise. In addition to APS, avalanche photodiodes (APDs) and related products such as silicon photomultipliers (SiPMs) can also achieve high sensitivity. However, due to the necessity of using high electric fields to initiate photomultiplier and collisional ionization, the scattered particle noise caused by high fields is severe in these devices.
Recently, the device concept of subthreshold operated photodiode (PD) gate controlled transistor has been proposed. It can achieve high gain without the need for high field or multi transistor circuits. The gain originates from the gate modulation effect induced by light, and in order to achieve this, sub threshold operation must be performed. It also integrates PD vertically with transistors in a compact single transistor (1-T) APS format, achieving high spatial resolution. This device concept has been implemented in various material systems, making it a viable alternative technology for high gain optical sensors.
The APD-QE system is dedicated to researching and analyzing photodiode gated amorphous silicon thin film transistors:
1. Characteristics of light transfer curves under different light intensities.
2. Threshold voltage variation (Δ Vth) of the light intensity function.
3. Output characteristics of transistors with/without exposure.
4. Quantum efficiency and photosensitive gain spectroscopy.
（a）Schematic diagram of a-Si: H photodiode gated LTPS TFT structure;（b）Equivalent circuit diagram showing APS with high SNR
（a）Microscopic photograph of pixels;（b）Microscopic photographs of partial arrays;（c）Photo of Image Sensor Chip
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