KLA R50 four probe resistivity measuring instrument

KLA R50 four probe resistivity measuring instrument product introduction:

KLA R50 four probe resistivity mapping systemIt is a product of the KLA resistance testing series. Resistance measurement and monitoring are crucial for any industry that uses conductive thin films, from semiconductor manufacturing to flexible electronic products required for wearable technology.KLA R50 four probe resistivity measuring instrumentIt can be involved in the fields of metal film uniformity distribution, ion doping and implantation characterization, film thickness and resistivity distribution, as well as non-contact film thickness measurement.

Advantages of KLA R50 four probe resistivity measuring instrument:

• Contact type four point probe (4PP) and non-contact eddy current (EC) configuration;

• 100mmZ stroke, high-precision control;

• Conductors and semiconductor thin film resistors, applicable in a range of 10 orders of magnitude;

• Custom editing of test points, including rectangular, linear, polar coordinates, and custom configurations;

• 200mmXY electric platform;

• RSMapper software is flexible and easy to use;

• Compatible with all thin film resistance measurement probes of KLA;

Measurement principle of KLA R50 four probe resistivity measuring instrument:

Four point probe (4PP)A probe composed of four conductive probes contacts the surface of the conductive layer with controllable force, with a non-conductive barrier layer between the measured conductive layer and the substrate. The standard measurement probe configuration involves applying current between two outer probes and measuring voltage between two inner probes. When measuring film resistance, the thickness of the conductive layer should be less than half of the distance between the two probes. KLA is hereR50 four probe resistivity measuring instrumentWe have developed dual-mode technology that allows for the measurement of voltage on spaced probes and is equipped with dynamic correction of boundary effects and compensation for probe spacing errors. KLA provides a wide range of probe types for characterizing and optimizing the properties of different surface materials, which can be used for almost any conductive thin film or ion implantation layer.

Eddy current (EC)It is a non-contact conductive thin film measurement technology. Applying a time-varying current through a coil to generate a time-varying magnetic field, when the magnetic field approaches a conductive surface, it induces a time-varying current (eddy current) in the surface. These eddy currents in turn generate their own time-varying magnetic fields, which couple with the probe coil and produce signal changes proportional to the resistance of the sample. KLA's special EC technology, with a single probe located at the top of the sample, allows for dynamic adjustment of the probe height at each measurement point, which is crucial for measurement accuracy and repeatability. The EC method is not affected by probe size or surface oxidation, making it very suitable for softer or other samples that are not suitable for 4PP contact method measurement.

KLA R50 four probe resistivity measuring instrument industry applications:

KLA R50 four probe resistivity measuring instrument product application:

1、 Uniformity of metal thin film

The uniformity of thin film resistance of metal thin films is crucial for ensuring component performance, and most metal thin films can be measured using 4PP and EC. EC is recommended for thicker highly conductive metal films, while 4PP is suitable for thinner metal films (>10 Ω/sq). However, regardless, 4PP/EC exhibits high correlation, ensuring accurate results can be obtained using any method. The resistance distribution map of the KLA R50 four probe resistivity measuring instrument can characterize the uniformity of thin films, deposition quality, and other process fluctuations.

2、 Characterization of ion implantation

The 4PP method is a standard measurement technique for measuring ion implantation processes. Hot and cold spots caused by lamp failure, poor wafer/platform contact, or changes in implantation dose can be identified by testing the ion implantation distribution after hot annealing. For silicon ion implantation layers, thermal annealing process is necessary for activating doped ions.

3、 Film thickness/resistivity/film resistance

Through the collected wafer data,KLA R50 four probe resistivity measuring instrumentIt is possible to draw a map of film resistance, film thickness, or resistivity distribution. By inputting the resistivity of the material, the distribution of film thickness can be calculated and displayed; Alternatively, by inputting film thickness data, the resistivity distribution can be calculated.

4、 Data collection and visualization

KLA R50 four probe resistivity measuring instrumentThe RSMapper software combines data collection and powerful analysis capabilities, with an intuitive visual interface that can be used for both the device itself and offline use. The various coordinate layout tools that come with the software can help users easily set data measurement points.

Product parameters of KLA R50 four probe resistivity measuring instrument:

Measurement diagram of KLA R50 four probe resistivity measuring instrument: