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Product Categories
- Vacuum tungsten wire sintering furnace
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- Preparation of Aluminum Nitride/Boron Nitride Powder
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- Gas pressure preparation of silicon nitride ceramic substrate
- Electrostatic suction cup series thermal equipment
Shanghai Chenhua Technology Co., Ltd
Gas pressure preparation equipment for silicon nitride ceramic substrates
NegotiableUpdate on 01/15
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Overview
Application and characteristics of pressure preparation equipment for silicon nitride ceramic substrates: Pressure sintering and forming of silicon nitride ceramic substrates. $r $n (1) horizontal structure, consisting of furnace body, heating device, vacuum system, atmosphere control system, etc. $r $n (2) The furnace shell material is made of 16MnR pressure vessel steel or 304 stainless steel. The heating element of $r $n (3) is made of isostatic pressed graphite, and the insulation layer is made of graphite felt, carbon carbon deep deposition fiber composite material, etc. $r $n (4) is equipped with an imported high-pressure gas mass flow meter to achieve stable sintering under dynamic process atmosphere.
Product Details
Gas pressure preparation equipment for silicon nitride ceramic substratesUsage and characteristics:
Pressure sintering molding of silicon nitride ceramic substrates.
(1) Horizontal structure, consisting of furnace body, heating device, vacuum system, atmosphere control system, etc.
(2) The furnace shell material is made of 16MnR pressure vessel steel or 304 stainless steel.
(3) The heating element is made of isostatic pressed graphite, and the insulation layer is made of graphite felt, carbon carbon deep deposition fiber composite material, etc.
(4) Equipped with an imported high-pressure gas mass flow meter to achieve stable sintering under dynamic process atmosphere.
(5) Infrared precise temperature control technology under high-pressure atmosphere, with a special infrared blowing structure, ensures long-term stable sintering at a maximum temperature of 2100 ℃ (not exceeding 2MPa).
Main specifications of pressure preparation equipment for silicon nitride ceramic substrates:
Design temperature 2100 ℃, vacuum Pa, loading area dimensions (length, width, height): 400 × 250 × 250mm, 500 × 450 × 450mm, 1250 × 500 × 500mm, 1400 × 600 × 600mm
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