Focused ion beam electron microscopy

The Thermo Scientific Helios 5 Laser focused ion beam electron microscope provides excellent capabilities for large volume 3D analysis, Ga free sample preparation, and precision microfabrication.

Thermo Scientific™ Helios™ 5 LaserFocused ion beam electron microscopyProvides excellent capabilities in large volume 3D analysis, Ga free sample preparation, and precision microfabrication. An innovative and integrated femtosecond laser that provides fast material removal rate and high cutting surface quality, making it a high-quality subsurface and 3D characterization device at millimeter scale and nanometer resolution.

For millimeter scale cross-sections, the faster material removal rate is 15000 times faster than typical Ga+FIB

☆ Statistical analysis of sub surface and 3D data to obtain larger volumes in a shorter amount of time

☆ Repeatable cutting and placement with three overlapping beams on the sample

☆ Quickly characterize deep features by extracting subsurface TEM thin films or blocks for three-dimensional analysis

☆ High throughput processing of challenging materials, such as non-conductive or ion beam sensitive samples

☆ Fast and simple characterization of air sensitive samples, without the need for transfer between different instruments for imaging and cross-sectional preparation

☆ Includes all the features of the Helios 5 PFIB platform, including high-quality Ga free TEM and APT sample preparation, as well as high-resolution imaging capabilities

Thermo Scientific™ Helios™ 5 LaserFocused ion beam electron microscopy parameters:

Femtosecond laser PFIB

Large volume: 2000 × 2000 × 1000 μ m3

Large beam current:~1mA (equivalent to ion beam current)

Cutting beam current: 74 μ A

Beam spot size: 15 μ m

Laser Integration: Three beams (SEM/PFIB/laser) are integrated into the chamber and have the same overlap point,

Realize repeatable cutting positions and 3D representation.

First harmonic: wavelength 1030 nanometers (infrared), pulse duration<280fs

Second harmonic: wavelength 515 nanometers (green), pulse duration<300fs

Electronic Optics:

☆ Three beam overlap point WD=4mm (same as SEM/FIB)

☆ Variable objective lens (electric)

☆ Polarization: horizontal/vertical

☆ Pulse frequency: 1kHz~1MHz

☆ Beam position accuracy:<250nm

Protective barrier: Automatic SEM/PFIB protective barrier

Software:

☆ Laser control software

☆ Laser 3D continuous slicing workflow

☆ EBSD laser 3D continuous slicing workflow

☆ Laser compilation

Safety: Chain laser housing (Level 1 safety)