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Shenzhen Vector Science Instrument Co., Ltd

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    3A-1801, Building 3, Hengtaiyu Building, Tonghui Road, Tangwei Community, Fenghuang Street, Guangming District, Shenzhen City

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12 inch vertical medium high temperature oxidation furnace

NegotiableUpdate on 05/07
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Overview

The 12 inch vertical medium high temperature oxidation furnace THEORIS X302H is mainly used for high-temperature and ultra-high temperature oxidation and annealing processes of 12 inches at 1000 ℃ -1200 ℃. The machine is a vertical single chamber furnace tube system, and the process is highly automated. The system mainly consists of transmission modules, process modules, power cabinets, and other parts. THEORIS X302P is mainly used for 12 inch oxidation and annealing processes at 600 ℃ -1000 ℃. The machine is a vertical single chamber furnace tube system, and the process is highly automated. The system mainly consists of transmission modules, process modules, power cabinets, and other parts.

Product Details

1. Product Overview:

THEORIS X302mainly used for12 inches, 600 ℃ -1200 ℃ oxidation and annealing process. The machine is a vertical single chamber furnace tube system, and the process is highly automated. The system mainly consists of transmission modules, process modules, power cabinets, and other parts.

2. equipmentapplication:

Wafer size

12 inches

Applicable Materials

silicon

Applicable process

High temperature drying/Wet oxygen oxidation, DCE oxidation, nitrogen doped oxidation, high temperature annealing

Applicable fields

Advanced integrated circuits, power semiconductors, substrate materials

3. Characteristic parameters:

The wet oxygen oxidation process involves adding water vapor to oxygen for oxidation reaction. Northern Huachuang The THEORIS X302 oxidation furnace equipment performs excellently in wet oxygen oxidation processes. It can precisely control the content and input method of water vapor to achieve precise regulation of the growth rate and quality of oxide film. In terms of temperature control, it also has the characteristic of high precision, ensuring that the silicon wafer is uniformly heated in a humid oxygen environment, thereby forming a uniform and dense oxide film. The adjustment of gas flow rate is also very precise, which can flexibly adjust the ratio of oxygen and water vapor according to process requirements, meeting the special requirements of different products for wet oxygen oxidation processes. Its excellent process stability and repeatability make the results of wet oxygen oxidation process predictable and reliable.

4.Features of the equipment

Advanced particle control technology

Advanced metal pollution control technology

High precision temperature field control technology

Support rapid upgrade/Temperature reduction technology

high productivity