PECVD plasma chemical vapor deposition system. This product consists of a solid-state plasma source, a gas proton flow control system, a substrate temperature control system, and a vacuum system. It uses the Nobadi operating software with centralized bus control technology. Suitable for the deposition of SiO2 and SiNx thin films at room temperature to 1200 ℃, and can also achieve TEOS source deposition, SiC film layer deposition, and liquid gas source deposition of other materials. It is particularly suitable for the deposition of efficient protective layer films on organic materials and non-destructive passivation films at specific temperatures.
PECVDPlasma Chemical Vapor Deposition System
1. Clean the coating in one go to prevent secondary pollution;
2. Open top structure, convenient for observing the sample;
3. The product adopts fully automatic control mode, touch screen, and digital display;
4. High degree of equipment integration;
5. Stable RF power supply, uniform temperature distribution, and improved film quality;
Product ModelNBD-PECVD1200-80TI
Electrical specificationsAC220V 4KW
Reachable temperature1200 ℃
Continuous temperature1150℃
The achievable heating rate is ≤ 20 ℃/minute
RF power supply300or500W 13.56MHz
Furnace tube size Φ80*1200mm
PECVDPlasma Chemical Vapor Deposition System
Control system
1TheNBD-101EPThe graphical interface for exchanging Chinese and English in embedded operating systems,7Inch true color touch screen input, intelligent human-machine dialogue mode, real-time heating power display, non-linear style temperature correction; The experimental report is generated independently, and the experimental data can be exported infinitely.
2The experimental process is more intuitive and the operation is more convenient;3It has functions such as over temperature alarm, disconnection prompt, and leakage protection.
temperature accuracy+/- 1℃
Heating elementMoDoped withFe-Cr-Al合金
Sealing system
真空度: ≤10Pa(Mechanical pump)
The pressure measurement and monitoring use a digital vacuum gauge, which can make the vacuum degree of the equipment more intuitive and the experimental results more accurate.
The gas supply system adopts two proton flow meters to accurately control the gas flow rate, which are integrated with the equipment;
Net weight360KG
Equipment usage precautions
1Equipment furnace temperature ≥300Do not open the furnace at ℃ to avoid injury;
2When using the equipment, the pressure inside the furnace tube shall not exceed0.125MPa(Absolute pressure) to prevent equipment damage caused by excessive pressure;
3When used under vacuum, the operating temperature of the equipment should not exceed800℃。
4The internal pressure of the gas supply cylinder is relatively high. When introducing gas into the furnace tube, a pressure reducing valve must be installed on the cylinder. It is recommended to purchase a small pressure reducing valve for testing, with a range of0.01MPa-0.15MPa,It will be more precise and safe to use.
5When the temperature of the furnace body is higher than1000At ℃, the furnace tube must not be in a vacuum state, and the pressure inside the furnace tube must be equivalent to atmospheric pressure and maintained at atmospheric pressure;
6Long term use temperature of high-purity quartz tube ≤1100℃
7It is not recommended to close the exhaust and intake valves at the flange end of the furnace tube during heating experiments. If it is necessary to close the air valve to heat the sample, always pay attention to the reading on the pressure gauge. If the absolute pressure gauge reading is greater than0.15MPaThe exhaust valve must be opened immediately to prevent accidents (such as furnace tube rupture, flange flying out, etc.)
Service Support1Annual warranty, providing lifetime support (warranty scope does not include consumable parts such as furnace tubes and sealing rings).