Photoelectric sensor ST276

NegotiableUpdate on 09/15

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

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Overview

ST276 1. Features: ● Composed of high emission power infrared photodiodes and high sensitivity dual phototransistors

Product Details

ST276

1、 Characteristics:
● Adopting high emission power infrared photodiodes and
Composed of high-sensitivity dual phototransistors.
● Detection focus distance: 4-10mm.

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2、 Limit parameters:（Ta=25℃）

Project		symbol	numerical value	unit
input	forward current	IF	50	mA
	reverse voltage	Vr	6	V
	Dissipated power	P	75	mW
output	Collector emitter voltage	Vceo	25	V
	Emitter collector voltage	Old	6	V
	Collector power consumption	Pc	50	mW
Operating Temperature		Topr	-20～+65	℃
Storage temperature		TSG	-30～+75	℃

3、 Optoelectronic characteristics:（Ta=25℃）

Project		symbol	test conditions		minimum	typical	maximum	unit
input	Forward voltage drop	VF1，VF2	IF=20mA		-	1.25	1.5	V
input	reverse current	IR	VR=3V		-	-	10	μA
output	Collector dark current	Ice	Vce=20V		-	-	1	μA
	Collector bright current	IL	Vce=15V IF=8mA	L3	0.30	-	-	mA
				L4	0.40	-	-	mA
				L5	0.50	-	-	mA
	saturation voltage	Vce	IF=8mA，Ic=0.15mA		-	-	0.4	V
transmission feature	response time	Tr	IF=20mA，Vce=5V Rc=100Ω		-	10	-	μs
transmission feature	response time	Tf	IF=20mA，Vce=5V Rc=100Ω		-	10	-	μs

4、 Outline dimension diagram:

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