- Phone
-
Address
No. 5, Dongchaishi Road, Yuquan Road, Haidian District, Beijing
Product Categories
Beijing Meihua Instrument Technology Co., Ltd
Low resistance four probe detector
NegotiableUpdate on 05/06
- Model
- Nature of the Manufacturer
- Producers
- Product Category
- Place of Origin
Overview
Low resistance four probe detector using GB/T 1552-1995 silicon and germanium single crystal resistivity measurement direct four probe method
Product Details
Low resistance four probe detector/Square resistance meter/four probe resistivity detector model; KDY-1
The instrument adoptsGB/T 1552-1995 Determination of resistivity of silicon and germanium single crystals by direct four probe method
（2) Range: resistivity of 10-5~10+3 ohms · cm, resolution of 10-5 ohms · cm
sheet resistance10-4 to 10+4 ohms/□, with a minimum resolution of 10-4 ohms/□
（3) Measurable materials: semiconductor materials such as silicon germanium rods, blocks, sheets, conductive films, etc
Accurately measurable semiconductor size: diameter≥20㎜
Measurable semiconductor dimensions: diameter≥8㎜
（4) Measurement method: Plane measurement.
（5) Voltage meter: Dual digital voltage meter that can simultaneously observe changes in current and voltage
A. Range 0~19.999 mV
B. Basic error ± (0.004% reading+0.01% full scale)
C. Sensitivity: 1uV
D input impedance>1000M Ω
E 4 1/2 digit display, 0 to 19999
（6) Constant current source:
A. Current output: DC current continuously adjustable from 0.003 to 100 mA, with AC power supply
B. Range: 10uA, 100uA, 1mA, 10mA, 100mA, five levels
C. Constant current source accuracy: ≤± 0.05% for all levels
（7) Four probe testing probe
A. Probe spacing 1.59mm
B. Probe mechanical mobility: ± 0.3%
C. Probe diameter 0.8mm
D. Probe material: tungsten carbide, with insulation resistance between probes and between probes and other parts greater than 109 ohms.
（8) Test stand: (optional)
Manual testing rack:The KDJ-1A manual test stand probe is manually operated up and down and can be used for testing cross-sectional single crystal rods and silicon wafers. The probe head can move up and down a distance of 120mm, and the testing table is 200x200 (mm).
（9) Accuracy
Electrical precision:1-1000 ohms ≤ 0.3%
Measurement accuracy of the whole machine:1-100 ohms · cm ≤ 3%
（10) Current: 220V ± 10%, 50HZ, power consumption<35W
Low resistance four probe detectorNote: If measuring the resistivity of metal powder, the sample must be pressed into blocks or pieces before measurement
