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Jiuyu Semiconductor Technology (Suzhou) Co., Ltd
BCT400 minority carrier lifetime tester for silicon rod crystal ingot
NegotiableUpdate on 05/07
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Overview
It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rods based on eddy current sensors and infrared induced photoconductivity methods, with two measurement modes: transient and quasi steady state. This device can detect the minority carrier lifetime within a depth range of 3mm and output the minority carrier lifetime values at different carrier injection levels. It can measure the minority carrier lifetime of low resistivity silicon single crystals and calculate the defect density of single crystals through software based light intensity bias
Product Details
It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rods based on eddy current sensors and infrared induced photoconductivity methods, with two measurement modes: transient and quasi steady state. This device can detect the minority carrier lifetime within a depth range of 3mm and output the minority carrier lifetime values at different carrier injection levels. It can measure the minority carrier lifetime of low resistivity silicon single crystals and calculate the defect density of single crystals through software based light intensity bias.
Brief introduction
Used for measuring the minority carrier lifetime of silicon and germanium single crystals, in addition to requiring a measurement plane, the sample block
There are no strict requirements for the shape, and the lifespan of block and sheet single crystals can be measured. Lifetime measurement can sensitively reflect a single crystal
The presence of heavy metal impurities and defects inside is an important testing item for the quality of single crystals.
2. Equipment composition
2.1 Optical pulse generation device
Repetition frequency>25 times/s, pulse width>60 μ s, light pulse turn off time<1 μ s
Infrared light source wavelength: 1.06-1.09 μ m (for measuring silicon single crystals) Pulse current: 5A~20A
The measurement system can directly measure the minority carrier lifetime of single crystals and polycrystalline silicon (ingots or blocks) without the need for surface passivation
It is a device that directly measures the minority carrier lifetime of single crystal or polycrystalline silicon rods based on eddy current sensors and infrared induced photoconductivity methods, with two measurement modes: transient and quasi steady state. This device can detect the minority carrier lifetime within a depth range of 3mm and output the minority carrier lifetime values at different carrier injection levels. It can measure the minority carrier lifetime of low resistivity silicon single crystals and calculate the defect density of single crystals through software based light intensity bias.
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