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Room 102, Door 2, Residential Building 8, Huayan Beili No.2 Courtyard, Chaoyang District, Beijing
Beijing Huapei Zhitong Technology Development Co., Ltd
Room 102, Door 2, Residential Building 8, Huayan Beili No.2 Courtyard, Chaoyang District, Beijing
WSB300 achieves crack free, highly repetitive bonding thickness, and excellent dimensional accuracy of ultra-thin wafers during the bonding process by precisely controlling the flexible diaphragm inside the bonding chamber. This diaphragm can press the wafer into the wax layer in a controlled manner, forming a uniform and parallel buffer layer, effectively protecting the wafer and its device structure. At the same time, the equipment structure design avoids direct contact between the wafer/substrate and device structure and the support disk, further reducing the risk of wafer damage. The device adopts a touch screen control interface, which is intuitive to operate. Users can program and control key process parameters such as temperature and load. The built-in pressure bonding system combines vacuum and positive pressure regulation to achieve stable and reliable bonding effects. Its vacuum/pressure chamber supports samples with a maximum diameter of 300 mm (12 inches) and a thickness of 12 mm. After the sample is placed, the system can automatically increase the vacuum and raise the temperature to the set value. The specific process time depends on the bonding material, wafer size, and process parameter combination. The entire bonding process supports fully automatic control of time, temperature, and wax evaporation process, and can be flexibly adjusted and optimized according to needs. Including the cooling stage, it usually takes about 60 minutes to complete a high-quality automated bonding process.