CSEAC 2026 on-site strike: The product matrix of electronic and ion sources from Jingjing Technology attracts attention

From August 31 to September 2, 2026, the 14th Semiconductor Equipment Materials and Core Components Exhibition (CSEAC 2026) was held in the Taihu Lake Lake, Wuxi. The exhibition area of this year's exhibition has exceeded 70000 square meters, bringing together over 1300 domestic and foreign enterprises, showcasing technological achievements in the fields of semiconductor equipment, materials, and core components.

At the star studded exhibition site, Shanghai Shunjing Technology Co., Ltd. (hereinafter referred to as "Shunjing Technology") became one of the focuses of attention. This hard technology enterprise, which focuses on particle beam core source devices, unveiled multiple independently developed electronic and ion source products at CSEAC, demonstrating China's independent breakthroughs in the field of semiconductor quantity detection equipment core components to the industry.

Shunjing Technology is deeply committed to the core technology of micro particle emission, breaking through multiple foreign long-term monopoly "bottleneck" processes, and possessing independent research and production capabilities for the entire spectrum of electronic sources, ion sources, and micro focus X-ray sources. The core performance of the product is benchmarked against international brands, enabling seamless replacement of mainstream imported electron microscopes and testing equipment, and widely serving fields such as scientific research, semiconductor precision testing, nano micro nano processing, and industrial non-destructive testing.

Electron source (electron microscope core emission light source)：Fully autonomous and controllable throughout the entire chain，Outstanding stability and durability

Electron source (electron microscope core emission light source)

The company's electronic source products cover all gradient models, including tungsten filament, lanthanum hexaboride (LaB ₆), and Schottky field emission; The continuous and stable service life is ≥ 8000 hours; it has extremely low beam spot drift characteristics, and there is no significant deviation in imaging after long-term operation. The beam uniformity and energy dispersion indicators meet the standards of similar imported products.

The entire electronic source chain is independently controllable, from single crystal raw material purification, needle tip precision processing to finished product packaging, self-developed and self-produced, freeing itself from overseas technology dependence; Outstanding stability and durability, relying on the core technology of the Jiao Tong University team, strong anti pollution ability, pure and stable beam current, extremely low long-term continuous work drift, suitable for industrial mass production and long-term scientific research experiments; Strong customization ability, able to adapt parameters and customize structures according to non-standard equipment and special experimental needs; The fourth is high compatibility, fully compatible with mainstream imported electron microscopy equipment such as Zeiss, Hitachi, NEC, Thermo Fisher Scientific, etc., achieving immediate use and seamless replacement on the machine, significantly reducing equipment operation and maintenance costs.

Electron sources are widely used in high-resolution microscopic morphology observation, material micro area composition analysis, semiconductor wafer defect detection, CD-SEM key dimension measurement, electron beam lithography, nanomaterial characterization and other scenarios. They are suitable for the precise characterization needs of universities, research institutes, material enterprises, and semiconductor manufacturers, and have achieved mass production and installation verification in many domestic research institutions and leading semiconductor enterprises.

Ion source (FIB micro nano processing core device)：High precision, low impurity ratio, stabilitydo

Ion source (FIB micro nano processing core device)

　

The liquid gallium (Ga) ion source independently developed by Jingjing Technology is the core component of the focused ion beam system (FIB, FIB-SEM). The principle is to use high-purity liquid gallium with low melting point and low vapor pressure as the emission medium, which is transported to the tungsten single crystal tip through a precision capillary tube. Under the action of a high-voltage electric field, a stable Taylor cone structure is formed, inducing efficient ionization of the liquid metal and continuously emitting a highly focused and high-purity gallium ion beam. Relying on the core technologies of stable infiltration of liquid metal, precise needle tip molding, and uniform electric field control that the team has overcome, we achieve long-term stable emission of ion beams, while balancing the dual functions of microscopic imaging and physical sputtering etching.

The ion source has a wide range of controllable beam characteristics, which can meet the dual requirements of high-precision imaging and large-scale etching; The ion beam has high focusing accuracy, small beam spot, extremely low impurity proportion, excellent emission stability, and no significant beam attenuation during continuous operation; The needle tip has a long service life and strong resistance to impact. Its core stability and lifespan parameters are benchmarked against international imported products of the same type, which can meet long-term precision machining needs.

The ion source has overcome industry pain points such as uneven infiltration of liquid metals, beam drift, and emission failure. The ion beam has high purity, good focusing, and excellent repeatability; Mature independent mass production technology, high product consistency, and stable yield rate; The device has high compatibility and can adapt to mainstream commercial FIB and FIB-SEM dual beam systems, supporting seamless replacement of imported components; Simultaneously supporting non-standard parameter customization, it can optimize beam parameters for special micro nano processing scenarios, solving industry problems such as poor adaptability of imported products, difficulty in customization, and long delivery times.

It is mainly used in precision micro nano processing scenarios such as micro repair of semiconductor chips, precise etching and deposition of nanodevices, ultra-thin sample slicing for transmission electron microscopy, analysis of material micro defects, preparation of micro nano structures, and preparation of atomic probe samples. It is a core key device for nanomanufacturing, advanced semiconductor processes, and cutting-edge material research.

Based on the core scientific research accumulation of Shanghai Jiao Tong University, Shunjing Technology has built a three in one particle beam source product matrix consisting of electron sources, ion sources, and X-ray sources. The core technologies of the three types of products are of the same origin and the process systems are interconnected, all of which have achieved forward self-developed and large-scale production. The company's entire range of devices has comprehensive advantages such as performance benchmarking against imported products, strong compatibility, customizability, high cost-effectiveness, fast delivery, and comprehensive after-sales service, fully empowering the localization and upgrading of strategic industries such as semiconductors, new materials, high-end equipment, and cutting-edge scientific research.

During the exhibition, multiple professional visitors from various fields such as scientific research, semiconductor precision testing, nano micro nano processing, and industrial non-destructive testing visited the booth of Jingjing Technology for inspection, communication, and exchange, and highly affirmed the company's breakthroughs. With the rise of domestic semiconductor quantity detection equipment, electron beam lithography equipment and other sub sectors, the demand for high-performance electron sources will continue to be released. The appearance of Sunac Technology at CSEAC 2026 not only showcases its technological accumulation and mass production capabilities in the field of core particle beam source devices, but also sends a clear signal to the industry: in the key link of the semiconductor industry chain, domestic strength is accelerating its rise.