Solution for online monitoring of precursor gas concentration in compound semiconductor MOCVD epitaxial equipment
Metal organic chemical vapor deposition (MOCVD) is the core process for preparing III-V compound semiconductors, such as gallium nitride (GaN), which relies on precise control of precursor gas concentration, growth rate, and process repeatability. To achieve process optimization, real-time monitoring of precursor concentration is required, and closed-loop control is formed by feedback adjustment of gas flow rate, temperature, pressure and other parameters. As a manufacturer of infrared gas sensors, Sifang Instrument has launched the Gasboard-2062 infrared gas sensor designed specifically for MOCVD, providing high-precision and real-time precursor concentration monitoring.