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Precise both inside and outside | Using NexION 5000 ICP-MS to analyze ultra trace elements in high-purity sulfuric acid
Date: 2025-12-19Read: 0



sulfuric acid(H2SO4)It is a key chemical used in semiconductor manufacturing, widely used inWafer cleaning, photoresist stripping, etching, and chemical polishingIn wafer cleaning, sulfuric acid can effectively remove organic residues and pollutants on the surface of silicon wafers, ensuring substrate cleanliness and can be used for subsequent process steps. For photoresist stripping, sulfuric acid is usually mixed with hydrogen peroxide to form a "Piranha etching solution", which is a highly oxidizing solution that can efficiently remove organic materials on the wafer. In addition, high-purity sulfuric acid plays a crucial role in the etching process and chemical polishing. In the former, it is used for structural shaping and patterned processing of semiconductor materials, while in the latter, it is used to ensure that the surface meets the required flatness and quality requirements.


内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素
内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

The purity of process chemicals (including sulfuric acid) is a key factor in semiconductor manufacturingEven trace amounts of ion or particle pollutants can cause defects such as short circuits, deposition issues, and corrosion, ultimately affecting device performance, reducing yield, and increasing production costs. In addition, impurities may also cause long-term reliability issues, such as device degradation and premature failure, which pose significant risks to high reliability applications such as automotive safety systems and medical devices. Therefore, strict control of impurities in sulfuric acid is crucial to ensure high-quality and reliable semiconductor device production.

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

With the continuous advancement of semiconductor technology, the demand for highly integrated microchips in the market continues to grow,More stringent requirements have been put forward for the cleanliness of processed chemicalsSemiconductor manufacturers are working hard to further reduce detection limits to meet the demand for ultra trace impurity analysis. SEMI C44-0618 "Specification and Guidelines for Sulfuric Acid"1Set the impurity limits for various metal elements in level C to 100 ppt (parts per trillion) and level D to 10 ppt. To achieve such a low detection threshold, advanced analysis techniques are required,Inductively Coupled Plasma Mass Spectrometry (ICP-MS)With itsHigh sensitivity and precisionDegree, becoming the preferred technology.

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

In addition to achieving ultra trace detection, maintaining long-term analytical stability in sulfuric acid analysis poses additional challenges for the application of ICP-MS. Sulfuric acidHigh viscosity, low volatility, and corrosivenessMay cause sulfuric acid deposition and corrosion on the instrument interface, which over time may affect the accuracy of the measurement. To ensure data reliability and reproducibility, it is necessary toWe need a robust analysis process and instruments.



This study proposes a method for usingNexION?5000+quadrupole ICP-MS9.8% H in multiple quadrupole mode2SO3in13 metal elementsA quantitative analysis method for Na, Mg, Al, K, Ca, Cr, Fe, Co, Ni, Cu, Zn, Ag, Pb.2passDetection limit (DL), background equivalent concentration (BEC), and long-term stability, etcindicatorEvaluated the data quality.




Experimental Design


Preparation of samples and standard solutions

All sample preparation and analysis were conducted in a Class 100 laminar flow hood in a Class 10000 cleanroom.


98% sulfuric acid is used in semiconductor manufacturing, and when analyzed by ICP-MS, ultrapure water is usually used to dilute it 10 times. In this study, high-purity concentrated sulfuric acid (98 wt%) from BASF (Taiwan, China Factory, China) was used, and ultrapure water (Millipore,>18.2 Ω M · cm) was used for 10 times dilution by weight to obtain a final concentration of 9.8%.


Quantitative analysis was conducted using the standard addition method (MSA). By continuously diluting the 1000 ppm single element stock solution (TruQ) listed in the "Consumables Used" table?ms, PerkinElmer prepared a 10 ppb intermediate concentration multi-element reserve standard solution using 2% nitric acid. At 9.8% H2SO4Add the final standard solution to obtain concentrations of 1, 5, 10, and 20 ppt.



instrument

All experiments were performed using NexION 5000 ICP-MS (PerkinElmer)The instrument components and working conditions are shown in Table 1.


Table 1. Components and Operating Conditions of NexION 5000 ICP-MS Instrument (Click to View Large Image)

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

*Optimize hot plasma for 2.5% oxide and cold plasma for maximum stability.



Dealing with viscosity challenges in sulfuric acid analysis

The main challenge in sulfuric acid analysis is its high viscosity, which may lead to sample deposition at the interface and potentially affect the long-term stability of the measurement. To address this issue, it is crucial to maintain analytical sensitivity while minimizing the injection volume as much as possible. This can be achieved by generating finer, drier, and more stable aerosols.


In this study, a Peltier cooling (PC3X) injection system set at 5 ℃ was used, combined with a swirl chamber and an all matrix injection system (AMS) gas inlet port. Before introducing the plasma, the PC3X system cools the aerosol, effectively filtering out larger droplets and allowing only finer aerosols to reach the plasma. AMS gas further dilutes aerosols, helping to form a finer and drier stable aerosol flow.3



Plasma interference

Inductively Coupled Plasma Mass Spectrometry (ICP-MS)Easily triggered by multi atomic and isotopic ions generated by plasma gas and/or matrix componentsSpectral interference influenceCommon plasma source interferences include Ar+、ArH+And ArO+Affects Ca separately+、K+And Fe+Analysis of. In reactive mode, the use of proprietary universal pooling technology (UCT) can effectively address these challenges.4Instruments equipped with multiple quadrupole technology, such as NexION 5000 ICP-MS, can more effectively eliminate interference.


When running in MS/MS mode, the first quadrupole analyzer (Q1) selectively transmits the target mass number while removing interfering ions, thereby purifying the ion beam and reducing background noise. Subsequently, the ions enter the quadrupole universal cell (Q2) and eliminate spectral interference through controlled gas-phase reactions. Finally, the second quadrupole analyzer (Q3) will filter out all residual interferences to ensure that only the target analyte reaches the detector. Ammonia (NH)3)It has a low ionization energy (9.7 eV) and a pair of electrons, making it a highly reactive gas. In this study, ammonia gas was used as the reaction gas for the analysis of all target elements. As shown in Table 3, mass transfer mode was used for Zn, while MS/MS in-situ mode was used for the remaining elements.


In Ag and Pb analysis, spectral interference is not the main issue when using ammonia gas. On the contrary, using ammonia can utilize its collision focusing effect to improve sensitivity. For elements analyzed in situ mode, cold plasma conditions were also used to achieve lower background equivalent concentrations (BEC).



Spectral interference in zinc analysis in sulfuric acid

As shown in Table 2, apart from plasma interference, sulfuric acid (H)2SO4)As a matrix, it also introduces various spectral interferences.


Table 2. Elements affected by S interference

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

(Click to view large image)


Among the affected elements, zinc (Zn) suffers the most severe interference and poses the greatest challenge for trace analysis. Zinc lacks the main isotopes, with its three most abundant isotopes(64Zn、66Zn and68Zn) is severely interfered by sulfur based atoms. Among them, the most abundant isotope64Zn will also be affected64Ni's allosteric interference. In semiconductor grade process chemicals, the content of metal impurities is usually extremely low. due to64The natural abundance of Ni is relatively low (0.926%), which has an impact on64The interference of Zn is usually minimal. However, if the Ni level is high, it may cause significant interference.


The first ionization energy of Zn is higher than that of other target elementsMoreover, due to the lack of major isotopes, its sensitivity is inherently low. In addition, signal suppression with 9.8% sulfuric acid will further reduce sensitivity. For ultra trace analysis, maintaining sufficient sensitivity is crucial as it directly determines the detection limit and data accuracy.


The most effective method to reduce interference with Zn in sulfuric acid analysis is to use the mass transfer mode under ammonia gas mode.This method enables Zn to form clusters in the reaction pool, thereby avoiding interferenceThe universal cell equipped with Axial Field Technology (AFT) plays a crucial role in this process, optimizing reaction kinetics and efficiency by precisely controlling the residence time of ions in the reaction cell.


The AFT voltage can be adjusted between 0 and 475 V, and the reaction (DRC) mode is usually set to 250 V. However, for reactions that form high valence clusters and require longer residence times, lower voltages are usually preferred.


Zn can react with ammonia gas, and multiple Zn clusters will form in the reaction pool, which can be observed using sub ion scanning mass spectrometry. As shown in Figure 1, when the mass number of Q1 is set to 66, the highest peak is observed at the mass number of Q3 at 117, corresponding to Zn (NH)3)3The cluster with the highest abundance. Compared to lower levels of cluster formation,The higher degree of advantage is greater, as it can reduce the possibility of forming high priced interfering clusters with ammonia gasThis ensures that there is less background noise. When the mass number of Q1 is set to 64, a similar cluster formation pattern is also observed.

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

Figure 1. Display of Zn and NH3Cluster formed sub ion scanning mass spectrometry image (click to view larger image)


AFT on Zn (NH)3)3The optimization of cluster formation is shown in Figure 2. As shown in the figure, the sensitivity of Zn cluster ions (66/117 and 64/115) varies with the AFT voltage, and the highest sensitivity is observed at 20 V, which is much lower than the commonly used voltage of the reaction cell. In other words, a significant improvement in sensitivity has been achieved through specific AFT optimization.

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

Figure 2. Sensitivity of Zn clusters (66/117 and 64/115) as a function of AFT, measured using a 200 ppt Zn element standard solution in 9.8% sulfuric acid (click to view larger image)


Results and Discussion


linearity

The calibration curves are shown in Figure 3, and the correlation coefficients (R) of all curves are greater than 0.999, which is within the calibration rangeShow good linearity.

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

Figure 3. Calibration curves of all target elements (using 9.8% H of standard range 1-20 ppt)2SO4Solution (click to view large image)



Method detection limit and background equivalent concentration

The method detection limit (MDL) is calculated as 9.8% H without adding standard2SO4The standard deviation of 10 repeated measurements of the solution is 3 times, and the background equivalent concentration (BEC) is 9.8% H without standard addition2SO4Measure the concentration of the solution. The summary of MDL and BEC data is shown in Table 3. The MDL of all elements is less than 1 ppt. When using a 10 fold dilution factor, it is equivalent to less than 10 ppt in undiluted sulfuric acid, indicatingThis method can meet the elemental analysis requirements of D-grade sulfuric acid.


Table 3. Method Settings (Click to View Large Image)

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素


BEC depends on the impurity content of the sample itself, as well as the sample processing and pollution control in the laboratory environmentExcept for Fe, Ni, and AI, the BEC of most elements is less than 1 ppt. Sensitivity is also an important factor in obtaining accurate results at the ultra trace level of one trillionth (ppt). For H2SO4The highly challenging element Zn in the matrix achieved a sensitivity of 20 cps/ppt using 66/117 and a sensitivity of 35 cps/ppt using 64/115, which is currently the highest sensitivity reported in sulfuric acid analysis.



stability

Towards 9.8% H2SO4Add 10 ppb of intermediate concentration multi-element standard to the solution to achieve a level of 10 ppt, and conduct stability tests using the obtained solution. The robustness of the instrument was evaluated by continuous injection and analysis of standard solutions without rinsing between samples. Using the variation of element recovery rate over time as a stability indicator.


As shown in Figure 4, during the 4-hour operation period, the recovery rates of all target elements remained within the range of 85% -115%,Indicating excellent stability of analytical methods and instrumentsIt is worth noting that this experiment is a pressure test aimed at evaluating the extreme robustness of the system. In routine analysis, it is recommended to use 1% HNO between samples3Washing with dilute acid solution can not only remove residues from previous sample operation, but also clean up sulfuric acid deposits, thereby further improving the long-term stability of the instrument.5

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

Figure 4. 9.8% H spiked at a concentration of 10 ppt through continuous suction and analysis2SO4Stability test of solution conducted for 4 hours (click to view large image)


内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素


Conclusion

Summary

WeNexION 5000 ICP-MSThe analysis of 13 elements in 9.8% semiconductor grade sulfuric acid was evaluated. weAdopting a single method that combines cold and hot plasma conditionsZn was analyzed using mass transfer mode under hot plasma conditions, while the remaining elements were measured using MS/MS in-situ mode under cold plasma conditions. The performance of the instrument was evaluated through indicators such as detection limit (MDL), background equivalent concentration (BEC), and long-term stability.

The detection limit of all target elements is below 0.5 pptMost slides below 0.1 ppt meet the SEMI C044-0618 D-level requirements. Except for Fe, Ni, and Al, which have higher BEC values due to sample processing or environmental pollution, most elements have values below 1 ppt. In mass transfer mode, the sensitivity of Zn is 20 cps/ppt at 66/117 and 35 cps/ppt at 64/115, which is currently the highest sensitivity reported in sulfuric acid analysis. Within the calibration range of 1-20 ppt: All target elements exhibit excellent linearity (R>0.999).


9.8% H spiked with 10 ppt through continuous injection2SO4The stability test was conducted on the solution for 4 hours.The element recovery rate remains between 85% and 115%, demonstrating the excellent robustness and reliability of the analytical method and instrument.









Consumables used

内外皆精密|使用NexION 5000 ICP-MS分析高纯硫酸中的超痕量元素

(Click to view large image)









reference document

1. SEMI C44-0618 “Specification and Guide for Sulfuric Acid”

2.NexlON 5000 Multi-Quadrupole ICP-MS-PerkinElmer Interactive Brochure, 2020.

3. “All Matrix Solution System for NexlON ICP-MS Platforms”, PerkinElmer Technical Note,2023.Consumables Used

4. Scott Tanner and Valdimir Baranov, 'Theory, Design and Operation of a Dynamic Reaction Cell for ICP-MS', Atomic Spectroscopy, Vol. 20(2), March/April 1999.

5. Chady Stephan and Ewa Pruszkowski, “Ultra-TraceElemental Analysis in High-Purity Sulfuric Acid”, PerkinElmer Application Note, 2021.

Slide down to view all the contents of Table 2