In the field of semiconductor manufacturing, precision coating on the surface of silicon wafers is a prerequisite for key processes such as photolithography and etching. Although traditional spin coating is widely used, it has serious pain points such as material waste (utilization rate<40%), easy fragmentation of thin silicon wafers, and uneven coverage of three-dimensional structures. Ultrasonic silicon wafer spraying technology has emerged, and with its non-contact, high uniformity, and low loss characteristics, it is gradually becoming a coating solution in the manufacturing process.

1The breakthrough of ultrasonic spraying technology

1. Non contact coating

To avoid the risk of crushing silicon wafers with sponge rollers during the roll coating process, the fragmentation rate is significantly reduced.

2. High uniformity and accuracy

The coating thickness range is wide (20 nm-100 μ m), with uniformity greater than 95% and excellent step coverage, suitable for three-dimensional structures such as TSV (silicon via).

3. Material and cost savings

The solution conversion rate is as high as 95% (traditional two fluid spraying only 20-40%), reducing the consumption of expensive materials such as photoresist.

4. Environmental Protection and Adaptability

No solvent volatilization pollution, supporting water-based solutions; Multiple functional materials such as photoresist, anti reflection layer, and insulation coating can be sprayed.

2、 Other application scenarios in the semiconductor field

1. Wafer manufacturing and photolithography process

TSV silicon through-hole: Ultrasonic spraying can accurately cover the inner wall of the through-hole with an aspect ratio of 10:1, and the photoresist hole bottom coverage rate is greater than 92%, avoiding the problem of missing hole bottom in traditional spin coating and significantly reducing the risk of electroplating short circuit.

2. Nano scale uniform deposition of photoresist

Ultrasonic atomization breaks the photoresist into 1-50 μ m droplets, with coating uniformity greater than 95%, avoiding the phenomenon of thickening at the edge of the "coffee ring".

3. Fan out packaging

Spraying dielectric materials (such as BCB glue) on the surface of the recombined wafer to achieve filling of micro level circuit gaps and improve the insulation and mechanical strength of RDL (redistribution layer).

4. Silicon carbide wafer

Uniformly spray anti reflective coating (ARC) to improve the lithography accuracy of SiC power devices and solve the problem of light reflection interference in high refractive index materials.

5. Electrode coating for biosensors

Deposition of silver nanoparticles+titanium dioxide nanofiber composite layer increases detection sensitivity by 40%, with a detection limit as low as 1 pM

IIIConclusion: The industrial value from substitution to reconstruction

Ultrasonic sprayingequipmentThrough physical innovation, we have overcome process bottlenecks and reduced the cost of semiconductor manufacturing chips by 97%, while minimizing material loss to below 5%. With the breakthrough of multi material compatibility, this technology is moving from silicon wafers to broader battlefields - photovoltaic cells, medical devices, flexible electronics... A precision manufacturing revolution marked by "thinner, more economical, and stronger" has arrived.