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Shanghai Tianshi Scientific Instrument Co., Ltd
Shanghai Tianshi PECVD plasma enhanced vapor deposition
NegotiableUpdate on 12/30
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Overview
PECVD plasma enhanced vapor deposition is a 1200 ℃ plasma enhanced hybrid physical chemical vapor deposition (HPCVD) dual temperature zone rotary furnace system source (with automatic matching function), upstream in-situ evaporation boat, 4-channel proton flowmeter control system, and high-performance vacuum pump. This applies to the heat treatment of inorganic composite powders and the uniform coating of powder surfaces (such as the preparation of conductive coatings for lithium-ion battery cathode powders).
Product Details
PECVD plasma enhanced chemical vapor depositionIt is a CVD technology that uses plasma to promote gas reactions. Its characteristics include:
1. Low temperature deposition: PECVD can be performed at lower substrate temperatures because the energy provided by the plasma can promote gas reactions and reduce the need for deposition temperature.
2. High deposition rate: Plasma enhances the gas reaction rate, thereby increasing the thin film deposition rate.
3. Good film quality: PECVD deposited films typically have good uniformity and low defect density, making them suitable for applications that require high-quality films.
4. Strong adaptability: It can deposit various materials, including oxides, nitrides, and fluorides, and is widely used in fields such as semiconductors, optoelectronic devices, and protective coatings.
5. Good controllability: By adjusting the parameters of the plasma, such as power, gas flow rate, and pressure, the composition and properties of the thin film can be precisely controlled.
Heating furnace parameters
▪ Maximum temperature: 1200 º C (<30 minutes), continuous operating temperature: 1100 ℃;
▪ Two PID temperature controllers and a 30 segment programmable temperature control system;
▪ Input power: 208-240V, single-phase, maximum power: 2.5KW;
▪ High purity alumina fiber insulation layer can minimize energy consumption to the greatest extent possible;
▪ Rotary furnace rotation speed: 2-10rpm;
▪ The furnace body is designed with an open design to achieve rapid cooling of the sample and facilitate the replacement of furnace tubes.
1. Low temperature deposition: PECVD can be performed at lower substrate temperatures because the energy provided by the plasma can promote gas reactions and reduce the need for deposition temperature.
2. High deposition rate: Plasma enhances the gas reaction rate, thereby increasing the thin film deposition rate.
3. Good film quality: PECVD deposited films typically have good uniformity and low defect density, making them suitable for applications that require high-quality films.
4. Strong adaptability: It can deposit various materials, including oxides, nitrides, and fluorides, and is widely used in fields such as semiconductors, optoelectronic devices, and protective coatings.
5. Good controllability: By adjusting the parameters of the plasma, such as power, gas flow rate, and pressure, the composition and properties of the thin film can be precisely controlled.
Heating furnace parameters
▪ Maximum temperature: 1200 º C (<30 minutes), continuous operating temperature: 1100 ℃;
▪ Two PID temperature controllers and a 30 segment programmable temperature control system;
▪ Input power: 208-240V, single-phase, maximum power: 2.5KW;
▪ High purity alumina fiber insulation layer can minimize energy consumption to the greatest extent possible;
▪ Rotary furnace rotation speed: 2-10rpm;
▪ The furnace body is designed with an open design to achieve rapid cooling of the sample and facilitate the replacement of furnace tubes.
