Optoelectronic alarm experimental system

MXY9018 Photoelectric alarmexperimental system

1Instrument Introduction

The application of alarm devices is very extensive. Alarm circuits are almost invariably used in car and motorcycle alarms, warehouse doors, and home security systems. With the rapid development of social science and technology, people have put forward increasingly high requirements for the performance of alarm devices. Traditional alarm devices usually use touch sensitive, on/off alarm devices, etc. This type of alarm has the characteristics of stable performance and strong practicality, but also has the disadvantage of narrow application range. And the security performance is not very good either. The photoelectric alarm has greatly improved this point. Nowadays, photoelectric alarms have been widely used in industrial and agricultural production, automation instruments, medical electronic equipment and other fields. The design of this experiment utilizes analog circuits and digital logic circuits, adopting a modular design concept, making the design simple, convenient and flexible. The circuit is simple, easy to implement, and works stably, so it has been widely used.

2、 Product configuration parameters

1infrared thermal imagersensorI2C interface communication；pixel: 16 × 12, 55 degree field of view angle；power supply voltage2.9 V ~3.6 V；test temperature-Local -40 °~85 °, remote -40 °~300 °; Working temperature -40 °~85 ° C;

2. STM32 microcontroller: ARM series M4 core MCU+FPU, 32-bit processor; 256KB flash ，64KB SRAM；

Working Voltage1.7V~3.6V； Encapsulation of LQFP64; External clock supports 4~26MHz, with an internal 16MHz clock;

3. 3.3V voltage regulator chip: input voltage 4.75-15V；output voltage3.3V；pressure drop1.1V@1A；High output current1A；voltage regulation accuracy3%；Working temperature range-40~125°；

4. Thermoelectric infrared sensor: sensitive element area 2.0 × 1.0mm2; Output signal>2.5V; balance<20%; Working voltage 2.2-15V; Working current 8.5-24uA; Storage temperature -35 ℃ -+80 ℃; Field of view 139 °× 126 °;

5. Infrared temperature sensor: Infrared temperature sensor; Range 0-50 °; Wavelength 8-14 µ m; accuracy 1%; Signal output: 5V;

6. Integrated operational amplifier: Input bias current 30pA; Input offset current 3pA; Input impedance 10¹²Oh?Common Mode Rejection Ratio 100dB; DC voltage amplification factor 106dB;

7. Display screen: 3.5-inch TFT with touch LCD screen/9486:320X480 dot matrix; The module driver chip adopts ILI9486, with a full view panel and a touch control chip and SD card slot on the bottom board; 3.3V power supply;

IIIExperimental Content

1Voltage current characteristic experiment of infrared emitter tube

2Infrared receiver tube dark current and photocurrent measurement experiment

3Experiment on rectangular wave generation (using555Chip)

4Gate circuit output experiment

5TheHS1838Output measurement experiment

6Infrared pyroelectric characteristic experiment；

7Single channel signal alarm and display experiment

8Multi channel signal alarm and display experiment

9Infrared Remote Control Decoding Experiment

10Infrared remote control digital tube display digital experiment

11Infrared remote control LED and buzzer control experiment

12Infrared pyroelectric alarm experiment

13Design experiment of infrared Ti thermometer

14Experimental study on temperature display of each pixel of infrared thermal imager

15Thermal imaging experiment of infrared thermal imager