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Beijing Beite Optoelectronics Technology Co., Ltd
III-V group long wave infrared detector
NegotiableUpdate on 01/27
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Overview
The photosensitive material for III-V long wave infrared detectors is InAsSb, which meets strict European environmental standards; 1.8-12 micron wide wavelength response, covering from short wave to long wave infrared; Working at room temperature without the need for refrigeration; The working mode is photovoltaic detection, and the preamplifier circuit is simple. Compared to the PCI optical long wave detector made of mercury cadmium telluride material, it has excellent low-frequency noise characteristics and can be used for DC or low-frequency infrared signal detection.
Product Details
III-V group long wave infrared detectorThe photosensitive material is InAsSb with a hyper hemispherical immersion lens; The wavelength response is 1.8-12 microns, with a wide wavelength response range covering from short wave to long wave infrared; Working at room temperature without the need for refrigeration; The working mode is photovoltaic detection, and the preamplifier circuit is simple. Compared to the PCI optical long wave detector made of mercury cadmium telluride material, it has excellent low-frequency noise characteristics and can be used for DC or low-frequency infrared signal detection.
III-V group long wave infrared detectorMain technical indicators:
Working environment temperature: 20 degrees Celsius (room temperature);
Wavelength response range: 1.8-12 micrometers
Peak response wavelength: 7.1 micrometers;
Peak current response rate Ri:>0.14 A/W (typical);
Peak detection rate D *:>7.7x109(Typical);
Response rate at 1.8 microns:>10% peak response rate;
Response rate at 12 microns:>10% peak response rate;
Response time:<1.65 nanoseconds (typical)
Packaging: TO-39;
Incident angle:>36 degrees
