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Room 2501, Dongchen Building, 60 Mudan Road, Pudong New Area, Shanghai
Shanghai Lianhang Electromechanical Technology Co., Ltd
Room 2501, Dongchen Building, 60 Mudan Road, Pudong New Area, Shanghai
Product Name: GENTEC-EO thermoelectric sensor QS5-H
Product Model: QS5-H
Product Introduction Our pyroelectric detector belongs to the category of room temperature detectors, and when exposed to a radiation source, the current output generated is proportional to the rate of temperature change. Its working principle can be described through an AC current source, capacitors, and resistors. The current output follows the formulaI = p(T)·A·dT/dt, Where I is the current value, p (T) is the thermoelectric coefficient, A is the effective area defined by the front electrode, and dT/dt is the temperature change rate of the thermoelectric crystal. The advantages of pyroelectric detectors compared to other infrared detectors include room temperature operation, wide spectral response, high sensitivity (D *), and fast response (sub nanosecond response under 50 Ω load). QS5-H discrete thermoelectric sensor with metal coating, high average power. The TO5 and TO8 packaging make the QS-H detector compact and easy to integrate into existing systems. 5mm and 9mm diameter thermoelectric sensors simplify optical alignment operations.
Performance characteristics:
Wide spectral response range
0.1 to 1000 μ m
Three types of product series are available for selection
Easy integration packaging form
Large area sensor
Multiple infrared windows to choose from
Quartz:0.2 to 3.5 µ m
Barium fluoride:0.2 to 17.5 µ m
sapphire:0.1 to 7.0 µ m
Silicon:1.2 to 9.0 µ m and 22 to 100 µ m
AR germanium: 1.8 to 23 µ m (10.6 µ m peak)
Selection Guide:
QS-L: Discrete Pyroelectric Detector, Low Noise Level
QS-H: Discrete Pyroelectric Detector, High Average Power
QS-IL: Hybrid Pyroelectric Detector, Current Mode, Low Noise Level
Optional features and accessories:
Multiple infrared windows to choose from
Quartz:0.2 to 3.5 µ m
Barium fluoride:0.2 to 17.5 µ m
sapphire:0.1 to 7.0 µ m
Silicon:1.2 to 9.0 µ m and 22 to 100 µ m
AR germanium: 1.8 to 23 µ m (10.6 µ m peak)
Technical Specifications:
Origin: Canada
Part number:201665
Max average power (continuous): 500 mW
Max average power: 500 mW
Spectral range:0.1 to 1000 μ m
Current responsivity:0.25 μA/W
Thermal frequency:5 Hz
Temperature coefficient:0.2 %/℃
Aperture diameter:5 mm
Absorbent:MT
Size(Ø×D):9.1 x 6.4 mm
Weight:0.001 kg
Encapsulation:TO5
Place of Origin |
Canada |
Part Number |
201665 |
Max average power (continuous) |
500 mW |
Max average power |
500 mW |
spectral range |
0.1 to 1000 μ m |
Current responsivity |
0.25 μA/W |
Thermal frequency |
5 Hz |
temperature coefficient |
0.2 %/℃ |
Aperture diameter |
5 mm |
absorber |
MT |
Size(Ø×D) |
9.1 x 6.4 mm |
weight |
0.001 kg |
encapsulation |
TO5 |
Product application:
Research, electronics, automotive, aerospace, remote sensing, telecommunications