Porous silicon nitride TEM carrier networkIt is a high-performance carrier designed specifically for transmission electron microscopy (TEM). It is based on high-purity single crystal silicon and covered with a layer of ultra-thin silicon nitride (thickness 10-50nm) as a support film, which can achieve atomic level resolution imaging.

　　Porous silicon nitride TEM carrier networkAdvantages:

1. Atomic level resolution: uniform thickness, high electron beam penetration rate, low imaging background noise, can clearly present atomic level structures, especially suitable for high-resolution characterization of aberration corrected electron microscopy.

2. High temperature resistance and corrosion resistance: Silicon nitride film can withstand high temperatures of 1000 ℃ and acidic environments, making it suitable for high-temperature sample preparation or TEM observation under acidic conditions, while traditional copper mesh is prone to deformation or corrosion under such conditions.

3. No interference from carbon elements: It does not contain carbon elements, avoiding the problem of carbon deposition in traditional carbon film carriers under electron beam irradiation, ensuring stable imaging quality during long-term observation or high-dose irradiation.

4. Good electron beam penetration: The ultra-thin silicon nitride film does not contain carbon elements, which can effectively avoid carbon deposition, reduce electron beam scattering, provide clear background, especially suitable for aberration atomic resolution characterization, and can obtain high-quality TEM images.

Preparation method:

It is usually prepared using chemical vapor deposition (CVD) combined with micro nano processing techniques such as photolithography and etching. If a silicon nitride film is first deposited on a silicon wafer substrate by LPCVD, then a pattern is formed on the film using photolithography technology, and a porous structure is etched using reactive ion etching (RIE) and other methods. Finally, the substrate silicon is removed to obtain a porous silicon nitride TEM carrier network.

Avoid prolonged exposure to humid or corrosive environments during use to prevent a decrease in the performance of the silicon nitride film.