The high-precision cutting technology of semiconductor slicer is mainly achieved through high-precision mechanical systems, advanced cutting processes, intelligent control systems, and precise visual positioning systems. The following is a specific introduction:
High precision mechanical system
Precision moving parts: Adopting imported linear motors and a closed-loop system of grating rulers, combined with real-time feedback algorithms, can ensure nanometer level repeatability accuracy of the cutting path. For example, the Bojiexin dual axis cutting machine operates independently with dual axes, achieving a positioning accuracy of ± 1 μ m.
Stable spindle system: The spindle system adopts air static pressure bearings, with a speed of up to 60000rpm and a radial runout of less than 0.1 μ m, providing stable power output for cutting and ensuring cutting accuracy and stability.
Seismic and fixing device: The seismic workbench combined with vacuum suction fixtures can eliminate micro level vibration interference, ensure that the wafer is not offset during the cutting process, and provide a stable foundation for high-precision cutting.
Advanced cutting technology
Blade optimization: Customize diamond blade particle size for different semiconductor materials such as silicon, gallium arsenide, silicon carbide, etc., such as # 2000 ultra-fine grinding wheel, which can reduce cutting surface burrs and extend blade life. The blade thickness is usually 15-50 μ m, and diamond particles are fixed on a nickel substrate through electroplating or sintering processes to balance wear resistance and cutting efficiency.
Laser cutting technology: For ultra-thin wafers or hard and brittle materials such as GaN, sapphire, etc., laser invisible cutting technology is used. Using a 1064nm picosecond laser to focus on the interior of the wafer surface, a modified layer is formed through multiphoton absorption effect. Then, the chip is separated by stretching the expansion film to avoid physical contact. The width of the cutting path can be controlled within 10 μ m to reduce edge breakage.
Composite cutting process: For hard and brittle materials such as GaN and SiC, a hybrid process of laser pre etching and diamond blade precision cutting is used to compress the cutting width from 50 μ m to 15 μ m, improving wafer utilization.
intelligent control system
Dynamic parameter intelligent adjustment: an intelligent tool pressure adjustment system based on real-time monitoring of cutting resistance, which can adapt to hard and brittle materials such as SiC and GaN, control edge breakage<10 μ m, and reduce grain loss. At the same time, dynamically adjust cutting speed, spindle speed and other parameters based on wafer thickness and material to optimize the consistency of cutting depth.
Data traceability and system integration: Real time recording of cutting parameters, such as blade pressure, speed, etc., and equipment status, seamless integration with MES system, achieving full process quality traceability. The open controller architecture supports remote operation and cloud optimization of process parameters, improving equipment utilization.
Accurate visual positioning system
High precision visual recognition: automatically identifying wafer Mark points through a high-resolution CCD vision system, with an accuracy of ± 3 μ m, supporting irregular cutting path planning, and reducing manual calibration errors. During the cutting process, the visual system can also monitor the cutting position in real time to ensure the accuracy of the cutting.