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The latest research results of Professor Li Yanbo's team in Nature Communications
Date: 2022-03-03Read: 42
Professor Yanbo Li's team from the University of Electronic Science and Technology of China has published their latest research findings on "Interface engineering of Ta" in the journal Nature Communications3N5thin film photoanode for highly efficient photoelectrochemical water splitting”。
The team conducted research on tantalum nitride (Ta)3N5）Interface modification of thin films,And combining this efficient interface modification method with NiCoFe Bi oxygen co catalyst, In：GaN/Ta3N5/The photoelectric conversion efficiency of Mg: GaN thin film photoanode reached 3.46%, with the highest photoelectric conversion efficiency.Our company's XES-40S3-TT photocatalytic AA * solar simulator provided effective assistance during the research process.
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Advanced interface modification engineering can not only improve the photoelectric conversion efficiency of devices, but also enhance their stability. Regarding Ta in the text3N5Ta of thin film photoanode3N5/Electrolyte interface and Ta3N5/Simultaneously modifying the back electrode interface greatly improves the photoelectric conversion efficiency and achieves long-term stable photoelectrocatalysis. This article uses the "one-step high-temperature nitriding method" to combine electron beam evaporation and atomic layer deposition methods to prepare a "sandwich structure" thin film photoanode In: GaN/Ta3N5/Mg：GaN。
In:GaN/TTa3N5/Schematic diagram of the preparation process of Mg: GaN thin film photoanode
This article shows through PL testing that Mg: GaN and In: GaN layers can play a surface passivation role, reducing Ta3N5The concentration of defects in the film.This article demonstrates through electrochemical testing that this interface modification method reduces the Fermi level pinning effect caused by surface state defects and lowers the initial potential of photoanode devices. Finally, this efficient interface modification method was combined with NiCoFe Bi oxygen co catalyst, In：GaN/Ta3N5/The photoelectric conversion efficiency of Mg: GaN thin film photoanode reached 3.46%, the highest photoelectric conversion efficiency!
In: GaN and Mg: GaN layers in In: GaN/Ta3N5/The role of Mg: GaN thin film
The article mentions the use of a solar simulator (SAN-EI ELECTRIC, XES-40S3-TT) to simulate sunlight, with an intensity calibration of 100 mW cm-2(AM1.5 G) ，It is used for both long-term sample deposition and PEC testing.
XES-40S3-TT photocatalytic dedicated AA * solar simulator
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Xenon lamp power: 150W
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Spectral mismatch: ＜ ± 25% AM1.5G*
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