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Technical characteristics of ultra-high temperature infrared heating furnace
Date: 2025-05-20Read: 3
  Ultra high temperature infrared heating furnaceIt is a heat treatment equipment that uses infrared radiation technology for heating. The following is an introduction from three aspects: technical characteristics, application scenarios, and advantages analysis:
  Ultra high temperature infrared heating furnaceTechnical characteristics:
Heating principle:
Infrared heating furnaces work based on the principle of object absorption of infrared radiation. When an object is exposed to an infrared radiation source, the infrared radiation energy is absorbed by the object and converted into thermal energy, causing the internal temperature of the object to rise.
The ultra-high temperature infrared heating furnace adopts a high-energy flow density infrared lamp and a gold-plated reflector design, which can generate high-intensity infrared radiation and achieve rapid heating.
Temperature control:
The ultra-high temperature infrared heating furnace can quickly heat the sample to a high temperature of 1500 ℃ and is equipped with a high-precision temperature controller to achieve precise temperature control.
Some devices support programmed temperature control and can set multiple heating curves according to experimental needs.
Heating environment:
Suitable for heating and cooling in various environments, such as vacuum, inert, oxidizing, and reducing atmospheres.
The back lampshade is equipped with a water cooling system, which can meet long-term testing needs and prevent the lampshade from deforming due to high temperatures.
Application scenarios
Materials Science:
Used for heating and analysis experiments of various materials such as electronic materials, ceramic materials, and metal materials.
In the aviation industry, it is used for heating testing of high-temperature alloy materials to ensure their performance and durability in high-temperature environments.
Semiconductor manufacturing:
Used for rapid heating and annealing heat treatment of semiconductor samples.
Thin film preparation:
Used for the formation of oxide crystals and the preparation of thin films in an oxidizing atmosphere.
Analysis instrument:
Can be connected to sample heating devices under X-ray or ultraviolet irradiation, such as heated desorption gas analyzers, XPS, XRD, PLD, etc.
Strengths Analysis
Rapid heating:
The heating rate exceeds 1000 ℃/min, and some equipment can even reach 150 ℃/sec, greatly shortening the experimental period.
High precision temperature control:
By using a dedicated temperature controller, the final temperature can be controlled with high precision, ensuring the accuracy and reproducibility of experimental results.
Visual observation:
Equipped with a temperature resistant window for easy observation of sample changes, and can be integrated with an optical system for image acquisition.
Clean heating:
During the heating process, there is no need to come into contact with the sample, which avoids contamination and impurity introduction, ensuring the purity of the sample.
Flexible customization:
Different power, constant temperature zone size, and temperature range can be customized according to requirements to meet different experimental needs.