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Cornell University achieves breakthrough in silicon optoelectronic modulator research
Date: 2012-11-30Read: 1

Cornell University SiliconPhotoelectric modulatorBreakthrough in research

Cornell University has recently made a breakthrough in the field of optoelectronic integration, successfully researching a micrometer sized siliconPhotoelectric modulatorPreviously, on siliconelectro-optic modulatorAll of them are in the millimeter scale, making it difficult to achieve practical optoelectronic integration. Although GaAs modulators can be made small, they cannot support current silicon integrated circuits very well. Yesterday's Nature magazine published an article by Cornell Assistant Professor Michal Lipson. In the article, they introduced a ring resonator, which is a structure in which a straight waveguide and a circular waveguide are coupled together, and the diameter of the circular waveguide is allowed to pass through integer multiples of the wavelength. The circular resonant cavity used in the article has a diameter of 12 microns, which perfectly matches the wavelength of 1576nm. The outer periphery of the annular structure is a negatively doped silicon ring, forming a PIN structure with the inner ring. When a voltage is applied to the PN junction, electrons and holes are injected into the waveguide, thereby changing the refractive index and resonant frequency of the waveguide, which determines the passage and blocking of signals. The key to this design is the introduction of a ring waveguide to replace the previously required long waveguide. In the experiment, the author found that a voltage of 0.3V can effectively control the modulator. This experiment achieved modulation of 1.5Gbps.
The article is titled 'Micrometer scale Silicon Electro Optical Modular.' Co authors also include Cornell graduate students Qianfan Xu and Bradley Schmidt, as well as postdoctoral researcher Sameer Pradhan from Intel.

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